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Transient and Furnace Annealing of Ion Implanted Gallium Arsenide

Published online by Cambridge University Press:  15 February 2011

J. S. Williams  and
H. B. Harrison
J. S. Williams
Affiliation:
Department of Communication and Electronic Engineering,Royal Melbourne Institute of Technology, Melbourne, 3000, Australia.
H. B. Harrison
Affiliation:
Department of Communication and Electronic Engineering,Royal Melbourne Institute of Technology, Melbourne, 3000, Australia.
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Abstract

This review examines the annealing behaviour of ion implanted gallium arsenide during furance, laser and e-beam processing.The two annealing regimes, namely solid phase regrowth via furnace or CW laser/e-beam annealing and liquid phase epitaxy produced by pulsed lasers/e-beam, are examined in some detail.Emphasis is placed upon an understanding of the physical processes which are important during the various annealing modes.Comparison with the annealing behaviour of ion implantedelemental semiconductors(notably silicon) is made throughout the review to highlight relevant similarities and differences between compound and elemental semiconductors.The electrical properties of annealed gallium arsenide layers are not treatedin any detail, although particular observations which are relevant to the annealing processes are briefly discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1: Symposium – Laser and Electron-Beam Solid Interactions in Materials Processing , 1980 , 209
Copyright
Copyright © Materials Research Society 1981

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