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Trace Impurities and Metastable States in a-Si:H

Published online by Cambridge University Press:  25 February 2011

Thomas Unold  and
J. David Cohen
Thomas Unold
Affiliation:
Department of Physics, University of Oregon, Eugene, Oregon 97403
J. David Cohen
Affiliation:
Department of Physics, University of Oregon, Eugene, Oregon 97403
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Abstract

The effect of trace amounts of impurities such as carbon and nitrogen on the density of states in undoped a-Si:H has been investigated using drive-level capacitance profiling and transient photocurrent methods. The results indicate a significant correlation between impurity levels and the susceptibility to metastable state creation after light-soaking. We found this correlation to be independent of bandtail broadening and hydrogen content in the material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 719
Copyright
Copyright © Materials Research Society 1990

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References

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