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Towards the Realization of a INP/CDS/LAS Cold Cathode

Published online by Cambridge University Press:  10 February 2011

M. Cahay
Affiliation:
Department of Electrical Engineering, University of Cincinnati, Cincinnati, Ohio 45221
A. Malhotra
Affiliation:
Department of Electrical Engineering, University of Cincinnati, Cincinnati, Ohio 45221
Y. Modukuru
Affiliation:
Department of Electrical Engineering, University of Cincinnati, Cincinnati, Ohio 45221
H. Tang
Affiliation:
Department of Electrical Engineering, University of Cincinnati, Cincinnati, Ohio 45221
W. Bresser
Affiliation:
Department of Electrical Engineering, University of Cincinnati, Cincinnati, Ohio 45221
P. Boolchand
Affiliation:
Department of Electrical Engineering, University of Cincinnati, Cincinnati, Ohio 45221
P. Mumford
Affiliation:
Air Force Research Laboratory, Sensors Directorate, WPAFB, Dayton, Ohio 45433
W. Friz
Affiliation:
Multi Area Research in Science (MARS) Consultants, Fairborn, Ohio 45324
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Abstract

In the past, we have proposed a new cold cathode emitter which consists of a thin region of CdS (Cadmium Sulfide) sandwiched between a heavily doped InP (Indium Phosphide) substrate and a low work function LaS (Lanthanum Sulfide) semimetallic thin film. In this paper, we briefly review the principle of operation of the cathode and discuss the preliminary experimental steps undertaken to realize prototypes of the device. More specifically, we describe the growth of bulk samples of LaS which is used to achieve Negative Electron Affinity of the CdS/LaS surface. X-ray diffraction and micro-Raman experiments show the successful growth of the fcc cubic phase of LaS samples.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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References

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