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Toward the Elimination of Light-Induced Degradation of Amorphous Si by Fluorine Incorporation

Published online by Cambridge University Press:  21 February 2011

X. Deng ,
E. Mytilineou ,
R. T. Young  and
S. R. Ovshinsky
X. Deng
Affiliation:
Energy Conversion Devices, Inc. 1675 West Maple Road, Troy, Michigan 48084
E. Mytilineou
Affiliation:
Energy Conversion Devices, Inc. 1675 West Maple Road, Troy, Michigan 48084
R. T. Young
Affiliation:
Energy Conversion Devices, Inc. 1675 West Maple Road, Troy, Michigan 48084
S. R. Ovshinsky
Affiliation:
Energy Conversion Devices, Inc. 1675 West Maple Road, Troy, Michigan 48084
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Abstract

We report on evidence that fluorine, properly incorporated into a-Si, replaces weakly bonded hydrogen and improves the material stability under light soaking. Our fluorinated amorphous silicon (a-Si:H:F) is made by if glow discharge at high deposition temperatures up to 430 C from a gas mixture of SiH4 or Si2H6 and F2. These a-Si:H:F films show much lower density of states in the light soaking saturated state than device quality a-Si:H prepared in the same deposition system. It is evident from our results that fluorine incorporated into the network at such high deposition temperature makes for a new configuration which minimizes dangling bonds and other defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 491
Copyright
Copyright © Materials Research Society 1992

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References

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