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Titanium Silicidation by Halogen Lamp Annealing
Published online by Cambridge University Press: 25 February 2011
Abstract
Silicidation of titanium on silicon is carried out with the halogen lamp annealing. It is found that the lamp annealing is quite effective in forming an oxide-free and homogeneous titanium disilicide layer with resistivity of 15–17 μohm·cm. Rutherford backscatterring and X-ray diffraction studies show that the halogen lamp annealing over 650 °C for only 60 sec results in disilicide. By a silicidation reaction, arsenic and boron atoms at silicon beneath a titanium layer are incorporated into a formed silicide layer. Arsenic atoms initially in a titanium layer are swept toward the surface as silicidation reaction proceeds. Arsenic atoms in titanium have an effect to retard silicidation reaction.
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- Copyright © Materials Research Society 1985
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