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Titanium Silicidation by Halogen Lamp Annealing

Published online by Cambridge University Press:  25 February 2011

T. Okamoto
Affiliation:
LSI R&D Lab., Mitsubishi Electric Corp.Mizuhara, Itami, Hyogo, 664, JAPAN
M. Shimizu
Affiliation:
LSI R&D Lab., Mitsubishi Electric Corp.Mizuhara, Itami, Hyogo, 664, JAPAN
K. Tsukamoto
Affiliation:
LSI R&D Lab., Mitsubishi Electric Corp.Mizuhara, Itami, Hyogo, 664, JAPAN
T. Matsukawa
Affiliation:
LSI R&D Lab., Mitsubishi Electric Corp.Mizuhara, Itami, Hyogo, 664, JAPAN
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Abstract

Silicidation of titanium on silicon is carried out with the halogen lamp annealing. It is found that the lamp annealing is quite effective in forming an oxide-free and homogeneous titanium disilicide layer with resistivity of 15–17 μohm·cm. Rutherford backscatterring and X-ray diffraction studies show that the halogen lamp annealing over 650 °C for only 60 sec results in disilicide. By a silicidation reaction, arsenic and boron atoms at silicon beneath a titanium layer are incorporated into a formed silicide layer. Arsenic atoms initially in a titanium layer are swept toward the surface as silicidation reaction proceeds. Arsenic atoms in titanium have an effect to retard silicidation reaction.

Type
Research Article
Copyright
Copyright © Materials Research Society 1985

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References

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