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Tisi2 Thin Films Formed on Crystalline and Amorphous Silicon

Published online by Cambridge University Press:  25 February 2011

Z.G. Xiao ,
H. Jiang ,
J. Honeycutt ,
C.M. Osburn ,
G. McGuire  and
G.A. Rozgonyi
Z.G. Xiao
Affiliation:
North Carolina State University, Dept. of Materials Science and Engineering, Raleigh, NC, 27695, USA
H. Jiang
Affiliation:
North Carolina State University, Dept. of Materials Science and Engineering, Raleigh, NC, 27695, USA The Royal Institute of Technology Solid State Electronics, Box 1298, S–16428, Kista, Sweden
J. Honeycutt
Affiliation:
North Carolina State University, Dept. of Materials Science and Engineering, Raleigh, NC, 27695, USA
C.M. Osburn
Affiliation:
North Carolina State University, Deptof Electrical and Computer Engineering, Raleigh, NC, 27695, USA Microelectronics Center of North Carolina, Research Triangle Park, NC 27709, USA
G. McGuire
Affiliation:
Microelectronics Center of North Carolina, Research Triangle Park, NC 27709, USA
G.A. Rozgonyi
Affiliation:
North Carolina State University, Dept. of Materials Science and Engineering, Raleigh, NC, 27695, USA
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Abstract

TiSi2 thin films were formed on crystalline and amorphous silicon substrates obtained by Ge+ and Ge++B+ implantation and optional subsequent annealing. Transmission electron microscopy, X-ray diffraction and electrical resistivity analysis revealed that the silicide formed on amorphous Si has more tendency to have a C54 structure rather than the metastable C49 structure. Also, the grain size is smaller and the silicide/silicon interface is smoother for silicides formed on amorphous Si. Comparison between implanted and unimplanted, (100) and (111) Si substrates indicated that the origin of the differences can be attributed to the latent energy stored in amorphous silicon, which favors the silicide with fine grains and promotes the transformation to the C54 phase. Non-random distribution of planar defects in C49 grains has been observed by plan-view TEM. A proposal that these defects are transformation stress induced microtwins is presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 167
Copyright
Copyright © Materials Research Society 1990

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References

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