Hostname: page-component-cd9895bd7-fscjk Total loading time: 0 Render date: 2024-12-27T02:02:14.119Z Has data issue: false hasContentIssue false

Time-Resolved Photoluminescence of CD(1-x)MN(x)SE and CD(1-x)MN(x)TE as a Function of Temperature

Published online by Cambridge University Press:  26 February 2011

J. J. zayhowski
Affiliation:
MIT Lincoln Laboratory, Lexington, Massachusetts 02173-0073
R. N. Kershaw
Affiliation:
Department of Chemistry, Brown University, Providence, Rhode Island 02912
D. Ridgley
Affiliation:
Department of Chemistry, Brown University, Providence, Rhode Island 02912
K. Dwight
Affiliation:
Department of Chemistry, Brown University, Providence, Rhode Island 02912
A. Wold
Affiliation:
Department of Chemistry, Brown University, Providence, Rhode Island 02912
R. R. Galazka
Affiliation:
Institute of Physics, Polish Academy of Science, Warsaw, Poland
W. Giriat
Affiliation:
Centro de Fisica, IVIC, Apartado 1827, Caracas 1000A, Venevuela
Get access

Abstract

The characteristics of the photoluminescence of Cd(1-x)Mn(x)Se (x = 0.05, 0.10, 0.20, 0.30) and Cd(1-x)Mn(x)Te (x = 0.20, 0.30, 0.45) change considerably as the sample temperature is reduced below the exciton-magnetic polaron (EMP) threshold temperature. At low temperatures the formation of magnetic polarons has large effects on the luminescence energy, the radiative lifetime, the radiative efficiency, and the spectral half-width of the luminescence. It is also observed that the formation time of the EMP increases almost linearly with temperature. All of these effects are explained with a simple model for the EMP.

Type
Research Article
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Galazka, R.R., Proc. Int. Conf. Physics of Semiconductors, Edinburgh (1978) p. 133.Google Scholar
2. Gaj, J.A., Proc. Int. Conf. Physics of Semiconductors, Kyoto (1980) [J. Phys. Soc. Japan Suppl. A49, 797 (1980)].Google Scholar
3. Heiman, D., Wolff, P.A. and Warnock, J., Phys. Rev. B27, 4848 (1983).CrossRefGoogle Scholar
4. Harris, J.H. and Nurmikko, A.V., Phys. Rev. Lett. 51, 1472 (1983).Google Scholar
5. Awschalom, D.D., Halbout, J.-M., Molnar, S. von, Siegrist, T. and Holtzberg, F., Phys. Lett. 55, 1128 (1985).Google Scholar
6. Zayhowski, J.J., Ph.D. Thesis (Unpublished), Department of Electrical Engineering, M.I.T. (1986).Google Scholar
7. Zayhowski, J.J., Jagannath, C., Kershaw, R.N., Ridgley, D., Dwight, K., and Wold, A., Solid State Commun. 55, 941 (1985).CrossRefGoogle Scholar
8. Warnock, J., private communications.Google Scholar
9. Golnik, A., Ginter, J. and Gaj, A.J., J. Phys. C. Solid State Phys. 16, 6073 (1983).Google Scholar
10. Stankiewicz, J., Centro de Fisica, Instituto Venezolano de Investigaciones, preprint.Google Scholar
11. Additional reference available in reference 4.Google Scholar
12. Zayhowski, J.J., Kershaw, R.N., Ridgley, D., Dwight, K., Wold, A., Galazka, R.R. and Giriat, W., submitted to Phys. Rev. B.Google Scholar
13. Cohen, E. and Sturge, M.D., Phys. Rev. B25, 3828 (1982).Google Scholar