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Time-Resolved Luminescence of Oxygen Related Defects in Aluminum Nitride

Published online by Cambridge University Press:  21 February 2011

J. H. Harris  and
R. A. Youngman
J. H. Harris
Affiliation:
BP Research, Warrensville Research Center, 4440 Warrensville Center Road, Cleveland, Ohio
R. A. Youngman
Affiliation:
BP Research, Warrensville Research Center, 4440 Warrensville Center Road, Cleveland, Ohio
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Abtract

A charged defect model for the formation of band-tail states, first proposed by Redfield et al. to understand the optical properties of Si doped GaAs [1], is applied to oxygen doped aluminum nitride (AIN) ceramics. In this case, oxygen substituting on a nitrogen site and (subsequently formed) aluminum vacancies comprise the charged centers. The results of optical absorption edge measurements as well as steady state and time-resolved luminescence between 10 and 300K are used to support this model. Finally, it is noted that the mixed covalent and ionic nature of bonding in AIN make it a model system for this charge defect picture, and thus explains the extremely large extent of the band-tail states in this material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 167: Symposium K – Advanced Electronic Packaging Materials , 1989 , 253
Copyright
Copyright © Materials Research Society 1990

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