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Time-Resolved Crystallization of GeTe

Published online by Cambridge University Press:  28 February 2011

E. Huber  and
E. E. Marinero
E. Huber
Affiliation:
IBM Almaden Research Center (K67/802) San Jose, California 95120
E. E. Marinero
Affiliation:
IBM Almaden Research Center (K67/802) San Jose, California 95120
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Abstract

Amorphous thin films of GeTe were irradiated with excimer laser pulses and the subsequent crystallization was investigated utilizing simultaneous transient reflectivity and conductivity measurements. Below a threshold fluence of 15 mJ/cm2 pure thermal behaviour was found. Above that value, nucleation and growth are observed during the cooldown process. Above a fluence of 22 mJ/cm2 the films crystallize to a large degree within 200ns. Between 15 and 22 mJ/cm2 crystallite nuclei are formed (“frustrated crystallization”), and application of a subsequent pulse over areas exposed to this fluence regime leads to extremely fast crystallization (50 ns).

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 74: Symposium A – Beam-Solid Interactions and Transient Processes , 1986 , 257
Copyright
Copyright © Materials Research Society 1987

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