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The Time-of-Flight Technique Applied to Amorphous Silicon Pin Solar Cells

Published online by Cambridge University Press:  16 February 2011

Hanna Brummack ,
N. Bernhard ,
K. Eberhardt  and
M. B. Schubert
Hanna Brummack
Affiliation:
Institut Für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, D-70569 Stuttgart, Germany
N. Bernhard
Affiliation:
Institut Für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, D-70569 Stuttgart, Germany
K. Eberhardt
Affiliation:
Institut Für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, D-70569 Stuttgart, Germany
M. B. Schubert
Affiliation:
Institut Für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, D-70569 Stuttgart, Germany
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Abstract

Fast transient photocurrent measurements have been performed on a-Si:H based pin diodes with thicknesses down to 0.5 μm. On a thick sample drift mobilities derived in either the small-signal or the space-charge limited current mode are compared. On real solar cell devices in SCL voltage (integral) Mode the electron lifetimes τ are determined from the extraction time of the photo-generated charge in dependence on the degradation state of the sample. A clear and reproducible correlation between lifetime and degradation state has experimentally been established. Lifetimes τ, for which an intensity dependence has been observed in the SCL voltage Mode, are compared to the μτ-product from a small-signal charge collection Measurement. The influence of the real absorption profile on the measurements is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 437
Copyright
Copyright © Materials Research Society 1994

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References

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