Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-25T18:42:48.919Z Has data issue: false hasContentIssue false
  • English
  • Français

Time-of-Flight Measurement on a-Ge:H and a-SiGe:H Alloys

Published online by Cambridge University Press:  21 February 2011

E.Z. Liu ,
D. Pang ,
W. Paul  and
J.H. Chen
E.Z. Liu
Affiliation:
Harvard University, Division of Applied Sciences, Cambridge, MA 02138
D. Pang
Affiliation:
Harvard University, Division of Applied Sciences, Cambridge, MA 02138
W. Paul
Affiliation:
Harvard University, Division of Applied Sciences, Cambridge, MA 02138
J.H. Chen
Affiliation:
Harvard University, Division of Applied Sciences, Cambridge, MA 02138
Get access

Abstract

We report TOF measurements on high quality intrinsic a-Ge:H and a-SiGe:H films of E04=1–4.eV in temperature ranges of 200 to 280 and 230 to 300K, respectively. Complete charge collection is achieved in all measurements. For a-Ge:H films, the (μτ)e product obtained from the Hecht plot is (5±3)×10-8 cm2/V above 240K and decreases at lower temperatures. The electron transit signal is dispersive at all temperatures. The a obtained from ttV-1/αis 0.23 at 200K and approaches 1.0 at 260K. The electron drift mobility μd shows activated behavior, with an energy of 0.37±0.05eV, and has an extrapolated room temperature value of 0.03 cm2/Vs. Compared to a-Ge:H, μd of a-SiGe:H alloy samples is lower by one order of magnitude but has a similar activation energy. These results are consistent with a band tail hopping transport model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 529
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Turner, W.A., Jones, S.J., Pang, D., Bateman, B.F., Chen, J.H., Li, Y.M., Marques, F.C., Wetsel, A.E., Wickboldt, P., Paul, W., Bodart, J., Norbert, R.E., El. Zawawi, I., Theye, M.L., J. Appl. Phys. 67, 7430 (1991).Google Scholar
2 Paul, W., J Non-Cryst. Solids 137&138, 803 (1991).CrossRefGoogle Scholar
3 See, for example, Kirby, P.B., and Paul, W., Phys. Rev. B 25, 5373 (1982).Google Scholar
4 Steemers, H., Spear, W.E., LeComber, P.G., Phil. Mag. B 47, L83 (1983).Google Scholar
5 Hourd, A.C. and Spear, W.E., Phil. Mag. Lett., 57, L13 (1985).Google Scholar
6 See, for example, Tiedje, T., in Semiconductors and Semimetals, Vol 21C, ed Pankove, J.I. (Acad. Press, London, 1984), andGoogle Scholar
Tiedjie, T. and Rose, A., Solid State Commun. 37, 49 (1981).Google Scholar
7 Tiedje, T., in The Phvsics of Hvdrogenated Amorphous Silicon II, ed. Joannopoulos, J.D. and Lucovsky, G. (Springer, Berlin, 1984), 261.Google Scholar
8 Karg., F., Kruhler, W., Moller, M., J. Appl. Phys. 60, 2016 (1986).Google Scholar
9 For an early description, see Mott, N.F. and Davis, E.A., Electronic Processes in Non-Crystalline materials, 2nd Ed (Oxford University Press, London 1978)Google Scholar
10 Silver, M., Schoenherr, G., Bassler, H., Phys. Rev. Lett. 48, 352 (1982).Google Scholar
11 Grant, A.J. and Davis, E.A., Solid State Commun. 15, 563 (1974).Google Scholar
12 Fritzsche, H., J. Non-Cryst Solids, 6, 49(1971).Google Scholar
13 Anderson, D.A. and Paul, W., Phil. Mag. B 44, 187 (1981).Google Scholar
14 Overhof, H., J. Non-Cryst. Solids 66, 261 (1984).Google Scholar