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Time Resolved Spectra of Raman and Thermal Emission During Pulsed Laser Heating of Silicon

Published online by Cambridge University Press:  22 February 2011

D. Von Der Linde ,
G. Wartmann ,
M. Kemmler  and
Zhen-He Zhu
D. Von Der Linde
Affiliation:
Universität-GHS-Essen, Fachbereich Physik, 4300 Essen 1, W. Germany
G. Wartmann
Affiliation:
Universität-GHS-Essen, Fachbereich Physik, 4300 Essen 1, W. Germany
M. Kemmler
Affiliation:
Universität-GHS-Essen, Fachbereich Physik, 4300 Essen 1, W. Germany
Zhen-He Zhu*
Affiliation:
Universität-GHS-Essen, Fachbereich Physik, 4300 Essen 1, W. Germany
*
*.Permanent address: Institute of Physics, Chinese Academy of Sciences, Beijing,P. R. of China.
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Abstract

Laser heating of crystalline silicon is investigated with 10 ns laser pulses at 532 nm Raman spectra below the transition threshold show distinct shifts to low frequencies. The absence of line shifts at higher energy is due to a time resolution artifact. Temperatures evaluated from frequency resolved anti-Stokes/Stokes ratios are in agreement with the temperature estimated from line shifts, and provide clear evidence that the surface reaches the melting point. These conclusions are confirmed by independent measurements of the thermal emission. Time-resolved pyrometry also provides the temperature evolution of the liquid phase.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 123
Copyright
Copyright © Materials Research Society 1984

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References

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