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Time Resolved Photoluminescence of Yb in InP

Published online by Cambridge University Press:  26 February 2011

P. B. Klein*
Affiliation:
Naval Research Laboratory, Washington, DC 20375
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Abstract

Time resolved photoluminescence (PL) measurements of the internal 4f-4f transitions of Yb3+ have been carried out in InP and GaP. In InP a nonexponential component is observed in the PL decay, and is interpreted in terms of carrier capture by nonequilibrium Yb3+. At low temperatures the exponential component is found to be much faster (≈12.5 μsec) than expected, and is tentatively associated with a weak coupling to resonant valence band states. As the temperature is increased, the PL intensity and the exponential component of the excited state lifetime are quenched with a thermal activation energy of ≈0.1 eV. This is interpreted as being due to the emission of a hole into the valence band by the neutral Yb acceptor.

Type
Research Article
Copyright
Copyright © Materials Research Society 1988

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References

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