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Time Resolved Measurements of Interface Dynamics During Pulsed Laser Melting Observed by Transient Conductance

Published online by Cambridge University Press:  15 February 2011

Michael O. Thompson  and
G. J. Galvin
Michael O. Thompson
Affiliation:
Department of Material Science, Cornell University, Ithaca, NY 14853
G. J. Galvin
Affiliation:
Department of Material Science, Cornell University, Ithaca, NY 14853
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Abstract

The transient conductance technique has been used in a detailed study of the liquid-solid interface dynamics during pulsed laser melting of Si and silicon-on-sapphire. Average melt and regrowth velocities, as well as the maximum melt depth, can be obtained with the technique. The measurements are found to agree well with a computer simulation based on a thermal model of the melt and subsequent solidification. The melt-in velocity has been observed to exceed 200 m/sec. Under 2.5 ns UV irradiation, the critical velocity for amorphization of <100> Si has been measured at 15 m/sec.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 57
Copyright
Copyright © Materials Research Society 1983

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References

REFERENCES

1. See the past proceedings of this conference.Google Scholar
2.Laser Annealing of Semiconductors, Poate, J. M., Mayer, J. W., Eds. (Academic Press, New York, 1982).Google Scholar
3.Galvin, G. J., Thompson, M. O., Mayer, J. W., Hammond, R. B., Paulter, N. and Peercy, P. S., Phys. Rev. Lett. 48, 33 (1982).Google Scholar
4.Thompson, M. O., Galvin, G. J., Mayer, J. W., Hammond, R. B., Paulter, N. and Peercy, P. S., in Laser and Electron-Beam Interactions with Solids, Appleton, B. R., Celler, G. K., Eds. (North Holland, New York, 1982), pp. 207–214.Google Scholar
5.Galvin, G. J., Thompson, Michael O., Mayer, J. W., Peercy, P. S., Hammond, R. B. and Paulter, N., to be published Phys. Rev. B. (Jan. 1983).Google Scholar
6.Thompson, Michael O., Galvin, G. J., Mayer, J. W., Peercy, P. S. and Hammond, R. B., accepted Appl. Phys. Lett.Google Scholar
7.Thompson, Michael O., Mayer, J. W., Cullis, A. G., Webber, H. C., Chew, N. G., Poate, J. M. and Jacobson, D. C., submitted Phys. Rev. Lett.Google Scholar
8.Liu, P. L., Yen, R., Bloembergen, N. and Hodgson, R. T., Appl. Phys. Lett. 34, 864 (1979).Google Scholar
9.Cullis, A. G., Webber, H. C., Chew, N. G., Poate, J. M. and Baeri, P., Phys. Rev. Lett. 49, 219 (1982).Google Scholar
10.Shank, C. V., Yen, R. T. and Hirlimann, C. in these proceedings.Google Scholar
11.CRC Handbook of Chemistry and Physics, (CRC Press, Boca Raton, 1980).Google Scholar
12.Baeri, P. in Laser Annealing of Semiconductors, Poate, J. M., Mayer, J. W., Eds. (Academic Press, New York, 1982), chapter 4.Google Scholar
13.Liquid Semiconductors, Glazov, V. M., Chizhevskaya, S. N., and Glagoleva, N. N., Eds. (Plenum Press, New York, 1969).Google Scholar
14.Auston, D. H., Surko, C. M., Venkatesan, T. N. C., Slusher, R. E. and Golovchenko, J. A., Appl. Phys. Lett. 33, 437 (1978).Google Scholar
15.Lowndes, Douglas H., Jellison, G. E. and Wood, R. F., in Laser and Electron-Beam Interactions with Solids, Appleton, B. R., Celler, G. K., Eds. (North Holland, New York, 1982), pp. 73–78.Google Scholar
16.Cullis, A. G., Webber, H. C. and Bailey, P., J. Phys. E. 12, 688 (1979).Google Scholar
17.Thermal Conductivity of the Elements: A Comprehensive Review, Ho, C. Y., Powell, R. W., Liley, P. E., J. Phys. Chem. Ref. Data 3 Supp. 1, I–589 (1972).Google Scholar
18.Peercy, P. S. and Wampler, W. R., Appl. Phys. Lett. 40, 768 (1982).Google Scholar
19.Baeri, P., Campisano, S. U., Foti, G. and Rimini, E., J. Appl. Phys. 50, 788 (1979).Google Scholar
20.Wood, R. F. and Giles, G. E., Phys. Rev. B 23, 2923 (1981).Google Scholar
21.Jellison, G. E. and Modine, F. A., Appl. Phys. Lett. 41, 180 (1982).Google Scholar
22.Spaepen, F. and Turnbull, D., in Laser Annealing of Semiconductors, Poate, J. M., Mayer, J. W., Eds. (Academic Press, New York, 1982), chapter 2.Google Scholar
23.Cullis, A. G., Webber, H. C. and Chew, N. G., in Laser and Electron-Beam Interactions with Solids, Appleton, B. R., Celler, G. K., Eds. (North Holland, New York, 1982), pp. 131–140.Google Scholar
24.Chalmers, B., Principles of Solidification, (Krieger Publishing Company, Huntington, New York, 1964), pp. 84–86.Google Scholar