Hostname: page-component-78c5997874-94fs2 Total loading time: 0 Render date: 2024-11-20T00:13:11.712Z Has data issue: false hasContentIssue false
  • English
  • Français

Threshold Irradiation Dose for Amorphization of Silicon Carbide

Published online by Cambridge University Press:  15 February 2011

L. L. Snead  and
S. J. Zinkle
L. L. Snead
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831-6087.
S. J. Zinkle
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831-6087.
Get access

Abstract

The amorphization of silicon carbide due to ion and electron irradiation is reviewed with emphasis on the temperature dependent critical dose for amorphization. The effect of ion mass and energy on the threshold dose for amorphization is summarized showing only a weak dependence near room temperature. Results are presented for 0.56 MeV silicon ions implanted into single crystal 6H-SiC as a function of temperature and ion dose. From this, the critical dose for amorphization is found as a function of temperature at depths well separated from the implanted ion region. Results are compared with published data generated using electron and xenon irradiating species. High resolution TEM analysis is presented for the Si ion series showing the evolution of elongated amorphous islands oriented such that their major axis is parallel to the free surface. This suggests that surface or strain effects may be influencing the apparent amorphization threshold. Finally, a model for the temperature threshold for amorphization is described using the Si ion irradiation flux and the fitted interstitial migration energy which was found to be ∼0.56 eV. This model successfully explains the difference in the temperature-dependent amorphization behavior of SiC irradiated with 0.56 MeV silicon ions at 1×10-3 dpa/s and with fission neutrons irradiated at 1×10-6 dpa/s irradiated to 1 5 dpa in the temperature range of ∼340 ±10K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 439: Symposium B – Microstructure Evolution During Irradiation , 1996 , 595
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Primak, W., Fuchs, L.H., and Day, P.P., Phys. Rev., 103(5), 1184–1192 (1956).Google Scholar
2. Blackstone, R., J. Nucl. Mater., 39, 319–322 (1971).Google Scholar
3. White, C.W., et al., Nucl. Instrum. Meth. B, 80/81 41–146 (1989).Google Scholar
4. McHargue, C.J. and Williams, J.M., Nucl. Instrum. Meth., B80/81, 889–894 (1993).Google Scholar
5. Weber, W.J., et al., Accepted, J. Nucl. Mater., (1996).Google Scholar
6. Snead, L.L., Zinkle, S.J., and Steiner, D., J. Nucl. Mater, 191–194, 560–565 (1992).Google Scholar
7. Snead, L.L. and Zinkle, S.J.. MRS Symposium #373 on Microstructure of Irradiated Materials. 1995: Materials Research Society, Pittsburgh Pa. Robertson, I. M., et al. eds.Google Scholar
8. Hart, R.R., Dunlap, H.L., and March, O.J., Rad. Effects, 9, 261–266 (1971).Google Scholar
9. Williams, J.M., McHargue, C.J., and Appleton, B.R., Nucl. Instrum. Meth., 209/210, 317–323 (1983).Google Scholar
10. Spitznagel, J., et al., Nucl. Instrum. Meth., B16, 237–243 (1986).Google Scholar
11. Edmond, J.A., et al., J. Mater. Res., 3, 321–328 (1988).Google Scholar
12. Chechenin, N.G., et al., Nucl. Instrum. Meth., B65, 341–344 (1992).Google Scholar
13. Horton, L.L., et al., Nucl. Instrum. Meth, B65, 345–351 (1992).Google Scholar
14. Vardiman, R.G.. Mat. Res. Soc. Symp. 1989.Google Scholar
15. Kinoshita, C., et al.. in Proceedings of the 11th International Conference on Electron Microscopy. 1986: Japanese Society of Electron Microscopy.Google Scholar
16. Matsunaga, A., et al., J. Nucl. Mater., 179–181, 457–460 (1991).Google Scholar
17. Inui, H., Mori, H., and Fujita, H., Phil. Mag., B 61, 107 (1990).Google Scholar
18. Inui, H., Mori, H., and Sakata, T., Phil. Mag. B, 66(6), 737–748 (1992).Google Scholar
19. Inui, H., et al., Phil. Mag., B 65, 1 (1992).Google Scholar
20. Harrison, S.D. and Corelli, J.C., J. Nucl. Mater., 99, 203–212 (1981).Google Scholar
21. Weber, W.J. and Wang, L.M., Nucl. Instrum. Meth., B 106, 298–302 (1995).Google Scholar
22. Weber, W.J. and Yu, N., Accepted Nucl. Instrum. Methods B, (1996).Google Scholar
23. Weber, W.J., Wang, L.M., and Yu, N., Nucl. Instrum. Meth., B 116, 322–326 (1996).Google Scholar
24. Weber, W.J.. 13th Internation Cong. on Defects in Insulating Materials. 1996.Google Scholar
25. Zinkle, S.J. and Snead, L.L., Nucl. Instrum. Meth. B, 116, 92–101 (1996).Google Scholar
26. Ziegler, J.F., Biersak, J.P., and Littmark, U.L.,: PergamonNew York. 1985).Google Scholar
27. Motta, A.T. and Olander, D.R., Acta Metta. Mater., 38, 2175–2185 (1990).Google Scholar
28. Rubia, T.D.d.l., Caturla, M.-J., and Tobin, M... in Microstructure of Irradiated Materials. 1995. Boston, MA. Robertson, I. M., et al. eds.Google Scholar