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Thin Multi-Layered Photoreceptor Deposited From Disilane

Published online by Cambridge University Press:  28 February 2011

S. Araki ,
H. Nou ,
H. Kamaji  and
K. Kiyota
S. Araki
Affiliation:
Peripheral Devices Laboratory, Fujitsu Laboratories Ltd. Kawasaki, 1015, Kamikodanaka, Nakaharaku, Kawasaki 211, Japan
H. Nou
Affiliation:
Peripheral Devices Laboratory, Fujitsu Laboratories Ltd. Kawasaki, 1015, Kamikodanaka, Nakaharaku, Kawasaki 211, Japan
H. Kamaji
Affiliation:
Peripheral Devices Laboratory, Fujitsu Laboratories Ltd. Kawasaki, 1015, Kamikodanaka, Nakaharaku, Kawasaki 211, Japan
K. Kiyota
Affiliation:
Peripheral Devices Laboratory, Fujitsu Laboratories Ltd. Kawasaki, 1015, Kamikodanaka, Nakaharaku, Kawasaki 211, Japan
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Abstract

A thin multi-layered photoreceptor drum has been fabricated, using glow-discharge decomposition of disilane. The photoreceptor is thin(10 μm), but it is charged up sufficiently. The photoreceptor has three layers; the p-type a-Si:H (blocking layer), the intrinsic B-doped a-Si:H (photoconductive layer) and a-SiC:H (passivation layer). Disilane is highly reactive. The intrinsic B-doped a-Si:H was prepared from a slightly gaseous mixture of B2H6 (3 ppm). The amorphous-SiC:H passivation layer deposited from Si2H6 and C3H8 was developed to achieve sufficient surface potential and to improve the environmental characteristics.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 677
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

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