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Thin Film InN/Anatase Bilayers as a Substitute Dye/Semiconductor Interface for Solar Cells

Published online by Cambridge University Press:  01 February 2011

Daniel Hoy  and
Martin Kordesch
Daniel Hoy
Affiliation:
[email protected], Ohio University, Physics and Astronomy, Clippinger Labs RM 251B, Athens, OH, 45701, United States
Martin Kordesch
Affiliation:
[email protected], Ohio University, Physics and Astronomy, Clippinger Labs RM 251B, Athens, OH, 45701, United States
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Abstract

The electronic properties of an InN/anatse bilayer, proposed as a replacement for the dye/semi-conductor interface in Dye Sensitized Solar Cell[1, 2], are measured. RF sputtered thin films of anatase and InN are used as the “dye” replacement. . Two types of InN film are prepared: polycrystalline samples deposited at high temperature, with an optical band gap of < 1 eV, and as-deposited (at least partially amorphous) samples with an optical band gap >1 eV. Energy Dispersive X-ray fluorescence, X-ray Diffraction, and Raman spectroscopy are used to characterize the samples. The resistance in the dark and under illumination are measured. The samples deposited at high temperature are crystalline and have a sheet resistivity ≈ 4 Ω/⁐, and display no photoconductivity. The partially amorphous samples have sheet resistivity of ≈ 500Ω/⁐. Since both types of InN films, including high quality (based on band gap) polycrystalline InN, do not show increased conductivity with light, we conclude that a solar cell based on an InN/anatase bilayer is not feasible.

Keywords

nitridephotovoltaicphotoconductivity
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1102: Symposium LL – Energy Harvesting–From Fundamentals to Devices , 2008 , 1102-LL04-02
Copyright
Copyright © Materials Research Society 2008

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References

References:

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