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Thickness Dependence of the Electrical Properties of Sol-Gel Derived Lead Zirconate Titanate Thin Films with (111) and (100) Texture

Published online by Cambridge University Press:  10 February 2011

F. Chu ,
F. Xu ,
J. Shepard Jr  and
S. Trolier-McKinstry
F. Chu
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
F. Xu
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
J. Shepard Jr
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
S. Trolier-McKinstry
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
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Abstract

Crack-free (111) and (100)-textured Pb(Zr0.52Ti0.48)O3 films with thicknesses ranging from 0.25 to 2.5 μm were prepared using a methoxyethanol-based precursor solution, multiple spin-coating and multiple crystallization steps. The thickness dependence of the dielectric, ferroelectric and piezoelectric properties were investigated on both (111) and (100) oriented PZT films. In both cases, the degree of preferred orientation did not change with thickness. It is found that the dielectric constant, remanent polarization and piezoelectric coefficients (d33 and d31) increase with increasing film thickness. The (100)-textured film showed higher dielectric constant but lower remanent polarization relative to (111) textured film. 1 μm was identified to be a critical thickness that marks the change of dielectric, ferroelectric and piezoelectric behaviors as a function of thickness.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 493: Symposium U – Ferroelectric Thin Film VI , 1997 , 409
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1. Chen, S. Y. and Chen, I. W., J. Am. Ceram. Soc. Vol. 77 (9), 2332 (1994).Google Scholar
2. Brooks, K. G., Reaney, I. M., Klissurska, R., Huang, Y., Bursill, L., and Setter, N., J. Mater. Res., 9 (10), 2540 (1994).Google Scholar
3. Chu, F., Su, T. and Trolier-McKinstry, S., The Eighth US-Japan Seminar on Dielectric & Piezoelectric Ceramics, Plymouth, MA, Oct. 1997, 120 (1997).Google Scholar
4. Chen, H. D., Udayakumar, K. R., Gaskey, C. J., and Cross, L. E., Appl. Phys. Lett. 67 (23), 3411 (1995).Google Scholar
5. Brooks, K., Kohli, M., Taylor, D. V., Maeder, T., Reaney, I., Kholkin, A., Muralt, P. and Setter, N., Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics, East Brunswick, U.S.A., Aug., 1996, 611 (1996).Google Scholar
6. Lefevre, M. J., Speck, J. S., Schwartz, R. W., Dimos, D., and Lockwood, S. J., J. Mater. Res. 11 (8), 2076 (1996).Google Scholar
7. Chen, H. D., Udayakumar, K. R., Gaskey, C. J. and Cross, L. E., J. Am. Ceram. Soc. 79 (8), 2189 (1994).Google Scholar
8. Taylor, D. V., Brooks, K. G., Kholkin, A. L., Damjanovic, D., and Setter, N., Proceedings of the 5th International Conference on Electronic Ceramics and Applications, Portugal, Sept. 1996, 1, 341 (1996).Google Scholar
9. Budd, K. D., Dey, S. K., and Payne, D. A., Brit. Ceram. Proc. 36, 107 (1985).Google Scholar
10. Shepard, J. Jr, Moses, P., and Trolier-McKinstry, S., Sensors & Actuators, (1997) (unpublished).Google Scholar