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Thickness Dependence of Electrical Transport in Buried CoSi2 Films Fabricated by Ion Beam Synthesis

Published online by Cambridge University Press:  03 September 2012

K. Radermacher ,
R. Jebasinski ,
S. Manti ,
D. Monroe ,
A.E. White  and
K.T. Short
K. Radermacher
Affiliation:
Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich, D-52425 Jülich, Germany
R. Jebasinski
Affiliation:
Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich, D-52425 Jülich, Germany
S. Manti
Affiliation:
Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich, D-52425 Jülich, Germany
D. Monroe
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974, USA
A.E. White
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974, USA
K.T. Short
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974, USA
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Abstract

We have performed electrical transport measurements on thin epitaxial buried CoSi2 layers in (111) and (100)Si with thicknesses ranging from 11.5 to 110 nm. The resistivity as a function of temperature exhibits metallic behaviour. The increase of residual resistivity with decreasing thickness can be explained by quantum mechanical weak localization effects induced by the interface roughness. This is supported by magnetoresistance measurements which provide long phase coherence lengths of 1Փ, ≈ 0.75 μm in (111)Si and 1Փ, ≈ 2.3 μm in (100)Si at 4.2 K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 320: Symposium D – Silicides, Germanides, and Their Interfaces , 1993 , 209
Copyright
Copyright © Materials Research Society 1994

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References

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