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Thickness and Interface Layer Effects on the Amorphous Silicon Film Property Studied by Various Photoluminescence Excitation Wavelengths

Published online by Cambridge University Press:  17 March 2011

Guozhen Yue ,
Daxing Han ,
Jeffrey Yang  and
Subhendu Guha
Guozhen Yue
Affiliation:
Department of Physics & Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, NC 27599-3255, USA
Daxing Han
Affiliation:
Department of Physics & Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, NC 27599-3255, USA
Jeffrey Yang
Affiliation:
United Solar Systems Corp., 1100W Maple Road, Troy, Michigan 48084, USA
Subhendu Guha
Affiliation:
United Solar Systems Corp., 1100W Maple Road, Troy, Michigan 48084, USA
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Abstract

We have studied the structure of highly hydrogen-diluted a-Si:H films by using Raman and photoluminescence (PL) spectroscopies. Raman spectra show a typical broad a-Si:H peak in the films with different substrate surfaces or i-layer thicknesses, except for one 1.4 μm film deposited directly onto a stainless steel (ss) substrate that shows the c-Si peak. An apparent μc-Si component was characterized by a low energy PL enhancement in a 0.5 μm film deposited directly onto the ss substrate. When a thin n-layer was inserted between the substrate and the a-Si film, no μc-Si growth was found in the first 0.5-1.0 μm thick layer but there was a μc-Si component in the top surface layer when the film was grown to a 1.5 μm thickness. The nonuniformity structure along the growth direction was characterized by PL spectroscopy using varied laser excitation wavelengths of 325, 488, 514.5, and 632.8 nm. We find that PL spectroscopy is a sensitive tool to characterize the microcrystallinity of the film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A5.9
Copyright
Copyright © Materials Research Society 2000

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References

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