Hostname: page-component-78c5997874-mlc7c Total loading time: 0 Render date: 2024-11-05T00:47:33.448Z Has data issue: false hasContentIssue false
  • English
  • Français

Thick AlN layers grown by HVPE on sapphire substrates

Published online by Cambridge University Press:  01 February 2011

Vitali Sukhoveev ,
Alexander Usikov ,
Oleg Kovalenkov ,
Vladimir Ivantsov ,
Alexander Syrkin ,
Vladimir Dmitriev ,
Charles Collins  and
Michael Wraback
Vitali Sukhoveev
Affiliation:
[email protected], Technologies and Devices International, Inc., United States
Alexander Usikov
Affiliation:
[email protected], Technologies and Devices International, Inc., United States
Oleg Kovalenkov
Affiliation:
[email protected], Technologies and Devices International, Inc., United States
Vladimir Ivantsov
Affiliation:
[email protected], Technologies and Devices International, Inc., United States
Alexander Syrkin
Affiliation:
[email protected], Technologies and Devices International, Inc.
Vladimir Dmitriev
Affiliation:
[email protected], Technologies and Devices International, Inc., United States
Charles Collins
Affiliation:
[email protected], U.S. Army Research Laboratory, United States
Michael Wraback
Affiliation:
[email protected], U.S. Army Research Laboratory, United States
Get access

Abstract

Thick low defect AlN and AlGaN layers grown on ultra violet (UV) transparent substrates are considered as promising substrate materials for the UV light emitters and detectors. Electrically insulating thick AlN layers may serve as the substrates for AlGaN/GaN-based high power high electron mobility transistors (HEMTs). In this paper we report on crack-free up to 20 μm thick AlN layers grown by stress control HVPE on 2-inch sapphire substrates. As-grown surface had a characteristic pyramidal morphology. Being thick enough, AlN layers can be polished to improve surface roughness. The minimum full width at half maximum (FWHM) values of AlN ω-scan x-ray (00.2) and (10.2) rocking curves was about 500 and 1000 arcsec, respectively. The XRD analysis was applied for the threading dislocation density evaluation in grown AlN layer. Screw dislocation density was found to be (3-7)×108 cm-2 for the layers from 3 to 12 μm thick.

Keywords

vapor phase epitaxy (VPE)III-Vnitride
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF29-03
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Zhang, A.P. et al. , Appl. Phys. Lett. 79, 1555 (2001).CrossRefGoogle Scholar
2. LaRoche, J.R. et al. , Solid State Electron 48, 193 (2003).CrossRefGoogle Scholar
3. Kuramoto, M. et al. , Jpn. J. Appl. Phys. Vol. 40, L925 (2001).CrossRefGoogle Scholar
4. Kovalenkov, O., Soukhoveev, V., Ivantsov, V., Usikov, A., Dmitriev, V., J. Cryst. Growth, 281, pp. 87–92 (2005).CrossRefGoogle Scholar
5. Reeber, R., Wang, K., Mat. Res. Soc. Symp. Proc. Vol 622, T6.35.1 (2000).CrossRefGoogle Scholar
6. Etzkorn, E.V., Clarke, D.R., J. Appl. Phys 89, 1025 (2001).CrossRefGoogle Scholar
7. Romano, L.T., Wan de Walle, C.G., Ager, J.W. III, Gotz, W., Kern, R.S., J. Appl. Phys. 87, 7745 (2000).CrossRefGoogle Scholar
8. Usikov, A., Kovalenkov, O.V., Mastro, M.M., Tsvetkov, D.V., Pechnikov, A.I., Soukhoveev, V.A., Shapovalova, Y.V., and Gainer, G.H.. Mat. Res. Soc. Symp. Proc. Vol. 743 (2003) L3.41.CrossRefGoogle Scholar
9. Usikov, A.S., Tvetkov, D.V., Mastro, M.A., Pechnikov, A.I., Soukhoveev, V.A., Shapovalova, Y.V., Kovalenkov, O.V., Dmitriev, V.A., O'Meara, B., Gurevich, S.A., Arakcheeva, E.M., Zakhgeim, A.L., Helava, H.: Phys. Stat. Sol. (c) 0, pp. 2265–2269 (2003).CrossRefGoogle Scholar
10. Metzger, T., Hopler, R., Born, E., Ambacher, O., Stutzmann, M., Stommer, R., Schuster, M., Gobel, H., Christiansen, S., Albrecht, M., Strunk, H. P., Philos. Mag. A 77, 1013 (1998).CrossRefGoogle Scholar
11. Lafford, T.A., Parbrook, P.J., Tanner, B.K.., Proceedings of the International Workshop on Nitride Semiconductors, Aachen, Germany, phys. stat. sol. (c) 542 (2002).Google Scholar
12. Wang, Hong-Mei, Zhang, Jian-Ping, Chen, Chang-Qing, Fareed, Q., Yang, Jin-Wei, Asif Khan, M., Appl. Phys. Lett., 81, 604 (2002).CrossRefGoogle Scholar