Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-29T09:22:11.098Z Has data issue: false hasContentIssue false
  • English
  • Français

Thermopower of Bi Nanowire Array Composites.

Published online by Cambridge University Press:  01 February 2011

T.E. Huber ,
M.J. Graf ,
C.A. Foss Jr  and
P. Constant
T.E. Huber
Affiliation:
Laser Research, Howard University, Washington, DC 20059
M.J. Graf
Affiliation:
Department of Physics, Boston College, Chestnut Hill, MA 02467
C.A. Foss Jr
Affiliation:
Department of Chemistry, Georgetown University, Washington, DC 20059.
P. Constant
Affiliation:
Laser Research, Howard University, Washington, DC 20059
Get access

Extract

The small effective mass and high mobility of electrons in Bi, make Bi nanowires a promising system for thermoelectric applications. Dense arrays of 20–200 nm diameter Bi nanowires were fabricated by high pressure injection of the melt. Transport properties and Seebeck coefficient were investigated for Bi nanowires with various wire diameters as a function of temperature (1 K < T < 300 K) and magnetic fields (B < 0.6 T). We discuss the problem of the contact resistance of Bi nanowire arrays.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 626: Symposium Z – Thermoelectric Materials 2000 - The Next Generation Materials for Small-Scale Refrigeration and Power Generation Applications , 2000 , Z14.2
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Huber, C.A. and Huber, T.E., J. Appl. Phys. 64, 6599 (1988).Google Scholar
2. Huber, C.A., Sadoqi, M., and Huber, T.E., Advanced Materials 7, 316 (1995).Google Scholar
3. Gurvitch, M., J. Low Temp. Phys. 38, 777 (1980).Google Scholar
4. Zhang, Z., Ying, J.Y., and Dresselhaus, M.S., J. Mater. Res. 13, 1745 (1998);Google Scholar
Zhang, Z., Sun, X., Dresselhaus, M.S., Ying, J.Y., and Heremans, J.P., Appl. Phys. Lett. 73 1589 (1998).Google Scholar
5. Dresselhaus, M.S., Sun, X., Cronin, S.B., Koga, T., Wang, K.L., and Chen, G., Proc. of the 16th International Thermoelectric Society Conference, Dresden, Germany, edited by Heinrich, A. and Schumann, J. (IEEE, 1997), p. 12.Google Scholar
6. Huber, T.E. and Calcao, R.,, Proc. of the 16th International Thermoelectric Society Conference, Dresden, Germany, edited by Heinrich, A. and Schumann, J. (IEEE, 1997), p. 404.Google Scholar
7. Huber, T.E. and Foss, C., Proc. of the 17th International Thermoelectric Society Conference, Nagoya, Japan, edited by Koumoto, K. and Yamaguchi, S. (IEEE, 1998), p. 244.Google Scholar
8. Bogachek, E.N., Scherbakov, A.G., and Landman, U., in “Nanowires”, edited by Serena, P.A. and Garcia, N. (Kluwer, Dordrecht, 1997).Google Scholar
9. Hicks, L.D. and Dresselhaus, M.S., Phys. Rev. B47, 16631 (1993).Google Scholar
10. Whatam Laboratory Division, Clifton, NJ.Google Scholar
11. Al-Rawashdeh, N.A.F., Sandrock, M.L., Sengling, C.J., and Foss, C.A. Jr, J. Phys. Chem. B102, 361 (1998).Google Scholar
12. Chakrabarti, D.J. and Laughlin, D.E., Bull. Of Alloy Phase Diagrams 5, 3061 (1972).Google Scholar
13. For a wire of diameter d, assuming a Bi volumetric concentration of c, and that Bi forms a continuous film of thickness t at the periphery of the wire, we obtain that t = c d/4. Therefore, for a concentration of 0.3% we obtain t = 0.2 nm for a wire diameter of 200 nm.Google Scholar
14. Alekseevskii, N.E., Bondar, V.V., and Polukarov, Y.M., J.E.T.P. Lett. 38 294 (1960).Google Scholar
15. Huber, T.E. and Constant, P., these Symposium proceedings.Google Scholar