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Thermomodulated Reflectivity Spectra of Gan/Sapphire Epilayer

Published online by Cambridge University Press:  15 February 2011

Y. Li ,
Y. Lu ,
H. Shen ,
M. Wraback ,
M. Schurman ,
L. Koszi  and
R. A. Stall
Y. Li
Affiliation:
Emcore Corporation, Somerset, New Jersey 08873 The State University of New Jersey, Rutgers University, Piscataway, New Jersey 08855–0909
Y. Lu
Affiliation:
The State University of New Jersey, Rutgers University, Piscataway, New Jersey 08855–0909
H. Shen
Affiliation:
Army Research Laboratory at Fort Monmouth, New Jersey 07703–5601
M. Wraback
Affiliation:
Army Research Laboratory at Fort Monmouth, New Jersey 07703–5601
M. Schurman
Affiliation:
Emcore Corporation, Somerset, New Jersey 08873
L. Koszi
Affiliation:
Emcore Corporation, Somerset, New Jersey 08873
R. A. Stall
Affiliation:
Emcore Corporation, Somerset, New Jersey 08873
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Abstract

Thermomodulation spectra from the metalorganic chemical vapor deposition (MOCVD) grown GaN have been measured in the temperature range 20 K - 310 K. A theoretical model is established to explain the modulation spectrum by considering the modulation of epilayer thickness and dielectric constant. By performing the lineshape analysis, the bandgap energy and broadening parameter were determined in the temperature range. The nonlinear temperature coefficient (Varshni coefficient) of energy gap is measured to be 5.9×10−4 eV/K. The temperature dependence of broadening parameter is also measured for the first time.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 741
Copyright
Copyright © Materials Research Society 1996

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