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Thermoelectric Properties of YbBiPt and YBiPt Thin Films

Published online by Cambridge University Press:  01 February 2011

Sadik Guner ,
Satilmis Budak ,
Claudiu I Muntele  and
Daryush Ila
Sadik Guner
Affiliation:
[email protected], Alabama A&M University, Center for Irradiation of Materials, Physics, 4900 Meridian street, Normal, AL, 35762, United States, +1 256 372 8413, +1 256 372 5868
Satilmis Budak
Affiliation:
[email protected], Alabama A&M University, Electrical Engineering, 4900 Meridian Street, Normal, AL, 35762, United States
Claudiu I Muntele
Affiliation:
[email protected], Alabama A&M University, Center for Irradiation of Materials, Physics, 4900 Meridian street, Normal, AL, 35762, United States
Daryush Ila
Affiliation:
[email protected], Alabama A&M University, Center for Irradiation of Materials, Physics, 4900 Meridian street, Normal, AL, 35762, United States
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Abstract

Monolayer thin films of YbBiPt and YBiPt have been produced with 560 nm and 394 nm thick respectively in house and their thermoelectric properties were measured before and after MeV ion bombardment. The energy of the ions were selected such that the bombarding Si ions stop in the silicon substrate and deposit only electronic energy by ionization in the deposited thin film. The bombardment by 5.0 MeV Si ions at various fluences changed the homogeneity as well as reducing the internal stress in the films thus affecting the thermal, electrical and Seebeck coefficient of thin films. The stoichiometry of the thin films was determined using Rutherford Backscattering Spectrometry, the thickness has been measured using interferometry and the electrical conductivity was measured using Van der Pauw method. Thermal conductivity of the thin films was measured using an in-house built 3ω thermal conductivity measurement system. Using the measured Seebeck coefficient, thermal conductivity and electrical conductivity we calculated the figure of merit (ZT). We will report our findings of change in the measured figure of merit as a function of bombardment fluence.

Keywords

ion-beam assisted depositionthermoelectricityRutherford backscattering (RBS)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1100: Symposium JJ – Materials Research for Electrical Energy Storage , 2008 , 1100-JJ04-22
Copyright
Copyright © Materials Research Society 2008

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