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Thermoelectric properties of Tl9BiTe6 / Tl9BiSe6 solid solutions

Published online by Cambridge University Press:  01 February 2011

Bernd Wölfing ,
Christian Kloc  and
Ernst Bucher
Bernd Wölfing
Affiliation:
Department of Materials Physics Research, Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, U.S.A.
Christian Kloc
Affiliation:
Department of Materials Physics Research, Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, U.S.A.
Ernst Bucher
Affiliation:
Department of Materials Physics Research, Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, U.S.A. Lehrstuhl für angewandte Festkörperphysik, Universität Konstanz, Konstanz, Germany
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Abstract

The compounds Tl9BiTe6 (TBT) and Tl9BiSe6 (TBS) crystallize in the tetragonal space group I4/mcm. Tl9BiTe6 has a thermopower of 185 μV/K and an electrical resistivity of 5.5 mΩcm at 300K, resulting in a power factor of S2/ρ = 0.6 mW/mK2. Compared to Bi2Te3 which is the state of the art material at this temperature this is about a factor of 7 lower. At 300 K TBS has a thermopower of 750 μV/K but a high resistivity of 130 Ωcm. To optimize the thermoelectric properties of TBT solid solutions have been formed with TBS. The resistivities and have been measured on Tl9BiTe1-xSex with x = 0.05, 0.08, 0.2 and 0.5. In addition to the electrical properties the lattice constants have been measured by X-ray diffraction. The dependence of the lattice constants on the Te/Se ratio clearly deviates from Vegard's law. Different affinities of Te and Se towards the two chalcogenide sites in the crystal can explain this behavior.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 626: Symposium Z – Thermoelectric Materials 2000 - The Next Generation Materials for Small-Scale Refrigeration and Power Generation Applications , 2000 , Z3.4
Copyright
Copyright © Materials Research Society 2000

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References

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