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Thermoelectric Properties of the Nanostructured NaPb18-xSnxMTe20 (M=Sb, Bi) Materials

Published online by Cambridge University Press:  01 February 2011

Aurelie Gueguen
Affiliation:
[email protected], Northwestern University, Chemistry, 2145 Sheridan road, Evanston, IL, 60208-6113, United States
Pierre Ferdinand Poudeu Poudeu
Affiliation:
[email protected], Northwestern University, Chemistry, Evanston, IL, 60208, United States
Robert Pcionek
Affiliation:
[email protected], Michigan State University, Chemistry, East Lansing, MI, 48824, United States
Huijun Kong
Affiliation:
[email protected], University of Michigan, Physics, Ann Arbor, MI, 48109, United States
Ctirad Uher
Affiliation:
[email protected], University of Michigan, Physics, Ann Arbor, MI, 48109, United States
Mercouri G. Kanatzidis
Affiliation:
[email protected], Northwestern University, Chemistry, Evanston, IL, 60208, United States
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Abstract

The thermoelectric properties of materials with compositions NaPb18-xSnxMTe20 (M=Sb, Bi, x=0, 3, 5, 9, 13, 16 and 18) were investigated in the temperature range 300-670K. All compositions exhibited p-type behavior over the measured temperature range. Electronic properties and transport were tuned through the manipulation of the Pb/Sn ratio. Increasing the Sn fraction results in an increase in electrical conductivity and a decrease in thermopower. The compositions NaPb13Sn5SbTe20 and NaPb9Sn9SbTe20 show a lattice thermal conductivity of ∼1 W/m/K at room temperature.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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References

[1] Venkatasubramanian, R., Sivola, E., Colpitts, T. and O'Quinn, B., Nature, 413, 597 (2001).Google Scholar
[2] Harman, T. C. Taylor, P. J. Walsh, M. P. Laforge, B. E. Science, 297, 2229 (2002).Google Scholar
[3] Harman, T. C. Walsh, M. P. Laforge, B. E. Turner, G. W. J. Electron. Mater. 24, L19 (2005).Google Scholar
[4] Hsu, K. F. Loo, S., Guo, F., Chen, W., Dyck, J. S. Uher, C., Hogan, T., Polychroniadis, E. K. Kanatzidis, M. G. Science, 303, 818 (2004).Google Scholar
[5] Quarez, E., Hsu, K. F. Pcionek, R., Frangis, N., Polychroniadis, E. K. Kanatzidis, M. G. J. Am. Chem. Soc. 127, 9177 (2005).Google Scholar
[6] Poudeu, P. F. P. D'Angelo, J., Downey, A. D. Short, J. L. Hogan, T. P. Kanatzidis, M. G. Angew. Chem. Int. Ed. 45, 3835 (2006).Google Scholar
[7] Androulakis, J., Hsu, K. F. Pcionek, R., Kong, H., Uher, C., D'Angelo, J., Downey, A. D., Hogan, T., Kanatzidis, M. G. Adv. Mater. 18, 1170 (2006).Google Scholar
[8] Orihashi, M., Noda, Y., Chen, L. D. Goto, T., Hirai, T., J. Phys. Chem. Solids, 61 919 (2000).Google Scholar
[9] Kim, W., Zide, J., Gossard, A., Klenov, D., Stemmer, S., Shakouri, A., Majumdar, A., Phys. Rev. Lett. 96 045901 (2006).Google Scholar
[10] Poudeu, P. F. P. D'Angelo, J., Kong, H., Downey, A., Short, J. L. Pcionek, R., Hogan, T. P. Uher, C., Kanatzidis, M. G. J. Am. Chem. Soc. 128 14347 (2006).Google Scholar