Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-29T07:28:37.476Z Has data issue: false hasContentIssue false
  • English
  • Français

Thermoelectric Properties of the cubic AgPb10SbTe12

Published online by Cambridge University Press:  01 February 2011

Kuei-Fang Hsu ,
Sim Loo ,
Wei Chen ,
Ctirad Uher ,
Tim Hogan  and
Mercouri G Kanatzidis
Kuei-Fang Hsu
Affiliation:
Department of Chemistry and Center for Fundamental Materials Research, Michigan State University, East Lansing, MI 48824, USA
Sim Loo
Affiliation:
Department of Electrical and Computer Engineering, Michigan State University, East Lansing, MI 48824, USA
Wei Chen
Affiliation:
Department of Physics, University of Michigan, Ann Arbor, MI 48109, USA.
Ctirad Uher
Affiliation:
Department of Physics, University of Michigan, Ann Arbor, MI 48109, USA.
Tim Hogan
Affiliation:
Department of Electrical and Computer Engineering, Michigan State University, East Lansing, MI 48824, USA
Mercouri G Kanatzidis
Affiliation:
Department of Chemistry and Center for Fundamental Materials Research, Michigan State University, East Lansing, MI 48824, USA
Get access

Abstract

AgPb10SbTe12 is one member of the cubic family of materials AgPbmSbTem+2, which adopts NaCl structure where Ag, Pb and Sb atoms occupy the Na site and Te atoms occupy the Cl site. Ingots of this compound were prepared by a solid state reaction for thermoelectric measurements. AgPb10SbTe12 is a narrow band gap semiconductor with Eg∼0.26 eV. In order to optimize the ZT of this member, compositions with deficiency of Ag and Bi-substitution were examined and found to exhibit enhanced power factor at 300 K. The Bi-substituted ingot had ZT∼0.39 at 300 K and ZT∼0.68 at 400 K. Carrier concentration and the mobility measurements are reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 793: Symposium S – Thermoelectric Materials 2003 - Research and Applications , 2003 , S6.3
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Nolas, G. S.; Kaeser, M.; Littleton, R. T.; Tritt, T. M. Appl. Phys. Lett. 2000, 77, 1855–1857.Google Scholar
2 Lamberton, G. A.; Bhattacharya, S. Jr; Littleton, R. T.; Kaeser, M. A.; Tedstrom, R. H.; Tritt, T. M.; Yang, J.; Nolas, G. S. Appl. Phys. Lett. 2002, 80, 598–600.Google Scholar
3 Shen, Q.; Chen, L.; Goto, T.; Hirai, T.; Yang, J.; Meisner, G. P.; Uher, C. Appl. Phys. Lett. 2001, 79, 4165–4167.Google Scholar
4 Nolas, G. S.; Cohn, J. L.; Slack, G. A.; Schujman, S. B. Appl. Phys. Lett. 1998, 73, 178–180.Google Scholar
5 Terasaki, I.; Sasago, Y.; Uchinokura, K. Phys. Rev. B, 1997, 56, R12685-R12687.Google Scholar
6 Hicks, L. D.; Dresselhaus, M. S. Phys. Rev. B, 1993, 47, 12727–12731.Google Scholar
7 Chen, G.; Neagu, M. Appl. Phys. Lett. 1997, 71, 2761–2763.Google Scholar
8 Venkatasubramanian, R, Siivola, E, Colpitts, T, O'Quinn, B. Nature 413, 597–602, (2001)Google Scholar
9 Ravich, Yu. I.; Efimova, B. A.; Smirnov, I. A. Semiconducting Lead Chalcogenides, Stil'bans, , L. S., Ed.; Press: New York, 1970, pp 323–346.Google Scholar
10 Harman, T. C.; Taylor, P. J.; Walsh, M. P.; LaForge, B. E. Science 2002, 297, 2229–2232.Google Scholar
11 Harman, T. C.; Taylor, P. J.; Spears, D. L.; Walsh, M. P. J. Electron. Mater. Lett. 2000, 29, L1-L4.Google Scholar
12 Systems with many band extrema, characterized by a degeneracy parameter γ, have higher thermoelectric power than those with a single extrema. This is because, for the same total carrier concentration, the concentration in each pocket is smaller for larger γ. This increases the value of S associated with each pocket compared to the value obtained for the single band case because S increases with decreasing carrier concentration. The amount of increase, however, depends on γ, the temperature, band gap, and other band parameters.Google Scholar
13 Chung, DY, Hogan, T, Brazis, P, et al. Science 2000, 287, 1024–1027.Google Scholar
14 This is true if the carrier scattering between valleys is absent or minimized.Google Scholar
15 The electronic thermal conductivity can be accurately estimated over all temperatures using the electrical conductivity data by the Wiedemann-Franz (WF) law (using a Lorenz number L of 2.45×10−8 W·ohm·K2).Google Scholar