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Thermoelectric Power Measurement of Catalyst-free Si-doped GaAs Nanowires

Published online by Cambridge University Press:  30 July 2012

Masahito Yamaguchi ,
Jihyun Paek  and
Hiroshi Amano
Masahito Yamaguchi
Affiliation:
Department of Electrical Engineering and Computer Science, Nagoya University, C3-1, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
Jihyun Paek
Affiliation:
Department of Electrical Engineering and Computer Science, Nagoya University, C3-1, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
Hiroshi Amano
Affiliation:
Department of Electrical Engineering and Computer Science, Nagoya University, C3-1, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan Akasaki Research Center, Nagoya University, B2-5, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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Abstract

Si-doped GaAs nanowires (NWs) were grown on (111)Si substrate by MBE-VLS method. The electrical characteristics of the GaAs NWs were measured. A joule heater was arranged near the tip of NW for making the gradient of substrate temperature. The obtained Seebeck coefficient of the GaAs NW increases linearly with a rise in temperature. The thermoelectric power of the Si doped GaAs NW was determined by the hole diffusion. It was estimated that the hole density in the Si-doped GaAs NW at room temperature was 5.9×1018 cm-3 from the slope of the temperature dependence of the Seebeck coefficient in the Si-doped GaAs NW. At room temperature, the Seebeck coefficient, thermoelectric power factor, and thermoelectric figure of merit (ZT) were 429 μV/K, 271μW/mK2, and 1.5×10-3, respectively.

Keywords

molecular beam epitaxy (MBE)nanostructurethermoelectric
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1439: Symposium N/AA – Nanowires and Nanotubes-Synthesis, Properties, Devices, and Energy Applications of One-Dimensional Materials , 2012 , pp. 83 - 87
Copyright
Copyright © Materials Research Society 2012

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References

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