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Thermoelectric Potential of Bi and Bi1−x Sbx Nanowire Arrays

Published online by Cambridge University Press:  21 March 2011

M. S. Dresselhaus ,
Y.-M. Lina ,
O. Rabin ,
S. B. Cronin ,
M. R. Black  and
J. Y. Ying
M. S. Dresselhaus
Affiliation:
Dept. of Electrical Engineering and Computer Science Massachusetts Institute of Technology, Cambridge, MA 02139-4307, USA Dept. of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139-4307, USA
Y.-M. Lina
Affiliation:
Dept. of Electrical Engineering and Computer Science Massachusetts Institute of Technology, Cambridge, MA 02139-4307, USA
O. Rabin
Affiliation:
Dept. of Chemistry Massachusetts Institute of Technology, Cambridge, MA 02139-4307, USA
S. B. Cronin
Affiliation:
Dept. of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139-4307, USA
M. R. Black
Affiliation:
Dept. of Electrical Engineering and Computer Science Massachusetts Institute of Technology, Cambridge, MA 02139-4307, USA
J. Y. Ying
Affiliation:
Dept. of Chemical Engineering Massachusetts Institute of Technology, Cambridge, MA 02139-4307, USA
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Abstract

The potential of Bi and Bi1−x Sbx nanowire arrays for thermoelectric applications is discussed. The advantages of bismuth as a low dimensional thermoelectric material are enumerated and the role of modeling is emphasized. The advantages of using the Sb concentration as well as the wire diameter as materials parameters for optimizing the thermoelectric performance of these nanowires are discussed, with particular emphasis given to the development of a high performance p-type nanowire thermoelectric material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 691: Symposium G – Thermoelectric Materials 2001--Research and Applications , 2001 , G10.1
Copyright
Copyright © Materials Research Society 2002

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References

REFERENCES

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