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Thermoelectric Generators of Sequentially Deposited Si/Si+Ge Nano-layered Superlattices

Published online by Cambridge University Press:  31 January 2011

Cydale Smith ,
Marcus Pugh ,
Hervie Martin ,
Rufus Durel Hill ,
Brittany James ,
Satilmis Budak ,
K Heidary ,
Claudiu Muntele  and
Daryush Ila
Cydale Smith*
Affiliation:
[email protected], Alabama A&M University, 1801 Lydia, Huntsville, Alabama, 35816, United States
Marcus Pugh
Affiliation:
[email protected], Alabama A&M University, Electrical Engineering, Huntsville, Alabama, United States
Hervie Martin
Affiliation:
[email protected], Alabama A&M University, Electrical Engineering, Huntsville, Alabama, United States
Rufus Durel Hill
Affiliation:
[email protected], Alabama A&M University, Electrical Engineering, Huntsville, Alabama, United States
Brittany James
Affiliation:
[email protected], Alabama A&M University, Electrical Engineering, Huntsville, Alabama, United States
Satilmis Budak
Affiliation:
[email protected], Alabama A&M University, Electrical Engineering, Huntsville, Alabama, United States
K Heidary
Affiliation:
[email protected], Alabama A&M University, Electrical Engineering, Huntsville, Alabama, United States
Claudiu Muntele
Affiliation:
[email protected], Alabama A&M University, Center for Irradiation of Materials, Normal, Alabama, United States
Daryush Ila
Affiliation:
[email protected], Alabama A&M University, Center for Irradiation of Materials, Normal, Alabama, United States
*
*Corresponding author: C. Smith; Tel.: 256-372-5875; Fax: 256-372-5867; Email: [email protected]
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Abstract

Effective thermoelectric materials have a low thermal conductivity and a high electrical conductivity. The performance of the thermoelectric materials and devices is shown by a dimensionless figure of merit, ZT = S2sσ/ KTC, σ is the electrical conductivity T/KTC, where S is the Seebeck coefficient, T is the absolute temperature and KTC is the thermal conductivity. In this study we have prepared the thermoelectric generator device of Si/Si+Ge multi-layer superlattice films using the ion beam assisted deposition (IBAD). To determine the stoichiometry of the elements of Si and Ge in the grown multilayer films and the thickness of the grown multi-layer films Rutherford Backscattering Spectrometry (RBS) and RUMP simulation software package were used. The 5 MeV Si ion bombardments were performed to make quantum clusters in the multi-layer superlattice thin films to decrease the cross plane thermal conductivity, increase the cross plane Seebeck coefficient and cross plane electrical conductivity.

Keywords: Ion bombardment, thermoelectric properties, multi-nanolayers, Figure of merit.

Keywords

thermoelectricnanostructureion-implantation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1181: Symposium DD – Ion Beams and Nano-Engineering , 2009 , 1181-DD02-04
Copyright
Copyright © Materials Research Society 2009

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References

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