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Thermodynamics and the CVD of Diamond

Published online by Cambridge University Press:  26 February 2011

Walter A. Yarbrough
Walter A. Yarbrough*
Affiliation:
271 Materials Research Laboratory The Pennsylvania State University University Park, Pa. 16802
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Abstract

Bulk diamond is unstable relative to bulk graphite except at high pressure and temperature. In spite of this, well crystallized diamond has been grown using numerous CVD methods, most of which have in common the production of atomic hydrogen and hydrocarbon radicals in regimes where solid carbon is expected to be a stable product. Two fundamentally different points of view have emerged in the effort to explain why well crystallized diamond, and not g”reatcphheitde” obry v aittroemouics hcyadrbroogne, nis aot bas erarvtee dh iignh tehre sthea enx dpiearmimoenndt sa. nTd hhee fnicrset dairagmueosn dth iast gkrinapethiictael liys stable with respect to graphite. If diamond formation is kinetically controlled the deposition mechanism is critical and much debate has centered on the mechanism and species involved. Alternatively it is argued that at the growth interface, diamond surfaces are stabilized by termination with hydrogen. If this is correct, and bulk reorganization ignored, then it is shown that a global understanding of the parameters important to the growth of diamond can be obtained without detailed kinetic analyses. Thus it is argued that single crystal diamond films of arbitrarily high purity and perfection are theoretically possible by CVD in spite of the bulk instability of diamond. It is also suggested that general principles exist which might be applied to the growth of other well crystallized metastable phases - notably cubic boron nitride.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 162: Symposium F – Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors , 1989 , 75
Copyright
Copyright © Materials Research Society 1990

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