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Thermodynamically Stable Conducting Films of Intermetallic PtGa2 on Gallium Arsenide

Published online by Cambridge University Press:  26 February 2011

Larry P. Sadwick
Affiliation:
University of California Los Angeles Department of Electrical Engineering Device Research Laboratory, 7732 Boelter Hall, Los Angeles, CA 90024
Kang L. Wang
Affiliation:
University of California Los Angeles Department of Electrical Engineering Device Research Laboratory, 7732 Boelter Hall, Los Angeles, CA 90024
David K. Shuh
Affiliation:
University of California Los Angeles Department of Chemistry and Biochemistry and Solid Science Center, 2080 Young Hall, Los Angeles, CA 90024.
Young K. Kim
Affiliation:
University of California Los Angeles Department of Chemistry and Biochemistry and Solid Science Center, 2080 Young Hall, Los Angeles, CA 90024.
R. Stanley Williams
Affiliation:
University of California Los Angeles Department of Chemistry and Biochemistry and Solid Science Center, 2080 Young Hall, Los Angeles, CA 90024.
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Abstract

The first epitaxial platinum gallium two (PtGa2) films have been grown on gallium arsenide (GaAs) (100) by co-evaporation of the elements under ultra-high vacuum conditions. An electron beam evaporator and a Knudsen cell were used to produce the platinum and gallium beams, respectively. The resulting films and bulk PtGa2 have been characterized by x-ray diffraction, Auger electron spectroscopy, and x-ray photoelectron spectroscopy. The data confirm the PtGa2 stoichiometry and crystal structure of the films, and demonstrate their chemical stability on GaAs (100). This study supports the contention that PtGa2 can be a suitable, temperature stable contact material on GaAs substrates.

Type
Research Article
Copyright
Copyright © Materials Research Society 1989

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References

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