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Thermodynamic and Structural Properties of Mev Ion Beam Amorphized Silicon

Published online by Cambridge University Press:  25 February 2011

S. Roorda ,
W.C. Sinke ,
J.M. Poate ,
D.C. Jacobson ,
P. Fuoss ,
S. Dierker ,
B.S. Dennis  and
F. Spaepen
S. Roorda
Affiliation:
FOM-Institute for Atomic and Molecular Physics, Kruislaan 407, 1089 SJ Amsterdam, The Netherlands.
W.C. Sinke
Affiliation:
FOM-Institute for Atomic and Molecular Physics, Kruislaan 407, 1089 SJ Amsterdam, The Netherlands.
J.M. Poate
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974, USA.
D.C. Jacobson
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974, USA.
P. Fuoss
Affiliation:
AT&T Bell Laboratories, Holmdel, NJ 07733, USA.
S. Dierker
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974, USA.
B.S. Dennis
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974, USA.
F. Spaepen
Affiliation:
Harvard University, Cambridge, MA 02138, USA
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Abstract

Thermodynamic and structural properties of amorphous Si (a-Si), prepared by MeV 28Si+-ion implantation are investigated by differential scanning calorimetry, Raman spectroscopy and X-ray diffraction. The influence of thermal annealing below 500 °C on a-Si is investigated with these different probes. The observed changes result from structural relaxation. Raman spectroscopy and X-ray diffraction show that structural relaxation is accompanied by changes in the average atomic structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989 , 683
Copyright
Copyright © Materials Research Society 1990

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References

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