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Thermionic Field Emission Transport at Nanowire Schottky Barrier Contacts

Published online by Cambridge University Press:  16 June 2015

Kan Xie ,
Steven Allen Hartz  and
Virginia M. Ayres
Kan Xie
Affiliation:
Department of Electrical and Computer Engineering, Michigan State University, East Lansing, MI 48824, USA
Steven Allen Hartz
Affiliation:
Department of Electrical and Computer Engineering, Michigan State University, East Lansing, MI 48824, USA
Virginia M. Ayres
Affiliation:
Department of Electrical and Computer Engineering, Michigan State University, East Lansing, MI 48824, USA
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Abstract

The high carrier concentrations typically reported for nanowire devices indicate that when Schottky barrier transport is present, it occurs in the thermionic field emission regime with a substantial but not exclusive tunneling component. Analysis by thermionic field emission is difficult due to its multivariate nature. In recent work, we developed a mathematical stability approach that greatly simplified the evaluation of the multivariate thermionic field emission parameters. This is a general method with potentially wide applicability, requiring only the effective mass m* and relative dielectric constant εr for a given semiconductor as inputs. In the present work, we investigate the influence of the materials properties effective mass m* and relative dielectric constant εr on stability for a range of real and simulated semiconductor nanowires. A further investigation of temperature sensitivity and regime trends is presented.

Keywords

thermionic emissionelectrical propertiesnanoscale
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1785: Symposium S – Semiconductor Nanowires and Devices for Advanced Applications , 2015 , pp. 19 - 25
Copyright
Copyright © Materials Research Society 2015 

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References

REFERENCES

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