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Thermal Stresses, Interfacial Reactions and Microstructures of Al/Ti and Al/TiN Thin Films Encapsulated by SiOF

Published online by Cambridge University Press:  15 February 2011

Wei-Tsu Tseng ,
Li-Wen Chen  and
G.-C. Tu
Wei-Tsu Tseng
Affiliation:
National Nano Device Laboratories, Hsinchu 300, TAIWAN
Li-Wen Chen
Affiliation:
Institute of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 300, TAIWAN
G.-C. Tu
Affiliation:
Institute of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 300, TAIWAN
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Abstract

Variations in stress and grain size of Ti- and TiN- capped Al thin films passivated by fluorinated silicon dioxide (SiOF) during repetitive thermal cycling are investigated. The amount of stress relaxation, elastic and plastic behavior of these thin film structures are compared. Ti and TiN cap layers strengthen the single Al film significantly while the presence of SiOF induces plastic deformation of metal layers. Less grain growth is associated with a dielectric passivated Al film. The penetration of fluorine into Al upon annealing can be reduced by a TiN barrier layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 476: Symposium N – Low-Dielectric Constant Materials III , 1997 , 267
Copyright
Copyright © Materials Research Society 1997

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References

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