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Thermal Stabilization of Non-Stoichiometric GaAs through Beryllium Doping

Published online by Cambridge University Press:  10 February 2011

R.C. Lutz ,
P. Specht ,
R. Zhao ,
S. Jeong ,
J. Bokor  and
E.R. Weber
R.C. Lutz
Affiliation:
Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720
P. Specht
Affiliation:
Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720
R. Zhao
Affiliation:
Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720
S. Jeong
Affiliation:
Department of Physics, University of California, Berkeley, CA 94720
J. Bokor
Affiliation:
Department of Electrical Engineering and Computer Science, University of California, Berkeley, CA 94720
E.R. Weber
Affiliation:
Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720
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Abstract

Beryllium-doped, non-stoichiometric GaAs grown by MBE at low temperatures appears superior to its undoped counterpart in several key areas vital to device manufacturing. X-ray diffraction studies have indicated that material grown above 275°C shows complete thermal stability to annealing at temperatures up to 600°C. This behavior is ascribed in part to strain compensation between the small beryllium atoms and the large arsenic antisites. Consequently, outdiffusion of excess arsenic from the non-stoichiometric material into neighboring layers upon annealing or subsequent high temperature growth is expected to be negligible. Short carrier lifetime (<1 psec) and high resistivity (>104 Ω-cm) have been observed in the same as-grown material. Sub-picosecond lifetimes have been measured previously in undoped material, but the low growth temperatures required produce a supersaturation of antisites allowing for significant hopping conductivity through the defect band in as-grown material, and significant arsenic outdiffusion upon annealing. Due to electrical compensation of antisites by beryllium acceptors, materials in which the ionized antisites represent a major fraction of a relatively small total antisite concentration are now made possible by proceeding to higher growth temperatures. Thus, nonstoichiometric GaAs having a beneficial combination of thermal stability, short carrier lifetime and high resistivity can be fabricated

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 55
Copyright
Copyright © Materials Research Society 1998

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