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Thermal Stability of Zinc and Selenium Implanted GaAs

Published online by Cambridge University Press:  25 February 2011

A C T Tang ,
B J Sealy  and
A A Rezazadeh
A C T Tang
Affiliation:
Department of Electronic and Electrical Engineering, University of Surrey, Uildford, Surrey, GU2 5XH, UK Now at Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge, CB3 OHE, UK
B J Sealy
Affiliation:
Department of Electronic and Electrical Engineering, University of Surrey, Uildford, Surrey, GU2 5XH, UK
A A Rezazadeh
Affiliation:
GEC Hirst Research Centre, East Lane, Wembley, Middlesex, HA9 7PP, UK
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Abstract

We have observed for the first time reversible changes in the sheet carrier concentration of the rapid thermally annealed Se and Zn implanted GaAs samples during subsequent heat treatments. The electrical profiles of the implanted samples have also been modified during the annealing processes. By observing the initial rate of change in the carrier concentration, an activation energy of about 2 eV is obtained which is thought to correspond to the diffusion of gallium atoms/vacancies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 146: Symposium B – Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing , 1989 , 443
Copyright
Copyright © Materials Research Society 1989

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References

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