Hostname: page-component-78c5997874-s2hrs Total loading time: 0 Render date: 2024-11-09T08:10:31.105Z Has data issue: false hasContentIssue false
  • English
  • Français

Thermal Stability of Reactively Sputtered TiN on InP as a Diffusion Barrier

Published online by Cambridge University Press:  25 February 2011

Zhengda Pang ,
Mohamed Boumerzoug ,
Roman V. Kruzelecky ,
Peter Mascher  and
John G. Simmons
Zhengda Pang
Affiliation:
Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University, Hamilton, Ontario, Canada L8S 4M1.
Mohamed Boumerzoug
Affiliation:
Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University, Hamilton, Ontario, Canada L8S 4M1.
Roman V. Kruzelecky
Affiliation:
Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University, Hamilton, Ontario, Canada L8S 4M1.
Peter Mascher
Affiliation:
Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University, Hamilton, Ontario, Canada L8S 4M1.
John G. Simmons
Affiliation:
Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University, Hamilton, Ontario, Canada L8S 4M1.
Get access

Abstract

The stability of rcactively sputtered TiN films on InP for application as a diffusion barrier has been examined using electrical measurements, Auger profiling and scanning electron microscopy (SEM). The samples were subjected to rapid-thermal-annealing (RTA) in a N2 atmosphere at temperatures between 400°C and 900°C. The SEM pictures of “as deposited” and RTA stoichiometric films show that the morphology is smooth, fine-grained and stable until 800°C. Auger depth profiling shows little interdiffusion between TiN and InP for RTA below 800°C. Annealing at temperatures of about 700°C reduces the sheet resistance of TiN relative to the “as-deposited” films by about 50%. Annealing at temperatures above 800°C results in a large sheet resistance. This may be associated with the deterioration of the TiN/InP morphology at high anneal temperatures as observed by SEM.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 561
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Zhang, L. C., Liang, C. L., Cheung, S. K., and Cheung, N. W., J. Vac. Sci., Technol., B5, 1716 (1987).Google Scholar
2. Noel, J. -P., Houghton, D. C., Este, G., Shepherd, F. R., and Plattner, H., J. Vac. Sci. Technol., A2 284 (1984).Google Scholar
3. Hara, D. J., Semiconductor International, December 1989, 96.Google Scholar
4. Kanamori, S., Thin Solid Films, 136, 195 (1986).CrossRefGoogle Scholar
5. Skerlavay, A., Claesson, Y. and Ribbing, C. G., Thin Solid Films, 186, 15 (1990).CrossRefGoogle Scholar
6. Geissberger, A. E., Sadler, R. A., Balazan, M. L., and Crites, J. W., J. Vac. Sci. Technol., B5, 1701 (1987).Google Scholar
7. Wendler, B., Thin Solid Films, 141, 219 (1986).Google Scholar
8. Ting, C. Y., J. Vac. Sci. Technol. A 21, 14 (1982).Google Scholar
9. Chang, C. C., Kamgar, A., and Kahng, D., IEEE Electron Device Lett. EDL- 6, 476 (1985).Google Scholar
10 Jimenez, M. C., Fernandez, M., Albella, J. M., and Martinez - Duart, J. M., J. Vac. Sci. Technol., B9, 1492 (1991).Google Scholar
11. Pang, Z., Boumerzoug, M., Kruzelccky, R. V., Mascher, P., and Simmons, J. G., “RF Sputter-Deposition of TiN Thin Films for III/V Semiconductors By Using Optical Emission Spectroscopy as In-Situ Process Control”, to be submitted.Google Scholar
12. Sundgren, J. E., Johnsson, B. O., and Karlsson, S. -E., Surf. Sci., 128, 265 (1983).Google Scholar
13. Comedi, D., McMaster University, Private communication.Google Scholar
14. Dean, P. J., Robbins, D. J., and Ikeda, M., and Okamoto, H., J. Phys. C: Solid State Phys., 12, 5567 (1979).Google Scholar
15. Asahi, H., Kawamura, Y., Ikeda, M., and Okamoto, H., J. Appl. Phys., 52, 2852 (1981).Google Scholar
16. Williams, D. S., Baiocchi, F. A., Beairsto, R. C., Brown, J. M., Knoell, R. V., and Murarka, S. P., J. Vac. Sci. Technol., B5, 1723 (1987).Google Scholar