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Thermal stability of post-growth-annealed Ga-doped MgZnO films grown by the RF sputtering method

Published online by Cambridge University Press:  29 August 2014

Kuang-Po Hsueh ,
Po-Wei Cheng ,
Wen-Yen Lin ,
Hsien-Chin Chiu ,
Hsiang-Chun Wang ,
Jinn-Kong Sheu  and
Yu-Hsiang Yeh
Kuang-Po Hsueh*
Affiliation:
Department of Electronics Engineering, Vanung University, Chung-Li 32061, Taiwan
Po-Wei Cheng
Affiliation:
Department of Electronics Engineering, Vanung University, Chung-Li 32061, Taiwan
Wen-Yen Lin
Affiliation:
Department of Electronics Engineering, Vanung University, Chung-Li 32061, Taiwan
Hsien-Chin Chiu
Affiliation:
Department of Electronics Engineering, Chang Gung University, Tao-Yuan 33302, Taiwan
Hsiang-Chun Wang
Affiliation:
Department of Electronics Engineering, Chang Gung University, Tao-Yuan 33302, Taiwan
Jinn-Kong Sheu
Affiliation:
Institute of Electro-Optical Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan
Yu-Hsiang Yeh
Affiliation:
Institute of Electro-Optical Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan
*
*Electronic mail: [email protected]
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Abstract

A radio-frequency magnetron sputtering technique and subsequent rapid thermal annealing (RTA) at 600, 700, 800, and 900 °C were implemented to grow high-quality Ga-doped MgxZn1-xO (GMZO) epi-layers. The GMZO films were deposited using a radio-frequency magnetron sputtering system and a 4 inch ZnO/MgO/Ga2O3 (75/20/5 wt %) target. The Hall results, X-ray diffraction (XRD), and transmittance were determined and are reported in this paper. The Hall results indicated that the increase in mobility was likely caused by the improved crystallization in the GMZO films after thermal annealing. The XRD results revealed that MgxZn1-xO (111) and MgO2 (200) peaks were obtained in the GMZO films. The absorption edges of the as-grown and annealed GMZO films shifted toward the short wavelength of 373 nm at a transmittance of 90%. According to these results, GMZO films are feasible for forming transparent contact layers for near-ultraviolet light-emitting diodes.

Keywords

ZnMgoxidation
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1675: Symposium K/RR – Synthesis, Characterization and Applications of Functional Materials— Thin Films and Nanostructures , 2014 , pp. 41 - 44
Copyright
Copyright © Materials Research Society 2014 

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References

REFERENCES

Neumann, M. D., Cobet, C., Esser, N., Laumer, B., Wassner, T. A., Eickhoff, M., Feneberg, M., and Goldhahn, R., J. Appl. Phys. 110, 013520 (2011).CrossRefGoogle Scholar
Chen, X., Ruan, K., Wu, G., and Bao, D., Appl. Phys. Lett. 93, 112112 (2008).CrossRefGoogle Scholar