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Thermal Stability of InGaAs Quantum Dots Under Large Temperature Transients

Published online by Cambridge University Press:  26 February 2011

R. Rangarajan ,
V. C. Elarde  and
J. J. Coleman
R. Rangarajan
Affiliation:
Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL 61801
V. C. Elarde
Affiliation:
Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL 61801
J. J. Coleman
Affiliation:
Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL 61801
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Abstract

We report here studies of the thermal stability of InGaAs quantum dots that have been subjected to various thermal treatments. Atomic force microscopy and photoluminescence spectroscopy are used to analyze the effects of the thermal treatments. In this paper we present data that demonstrates a remarkable improvement in the thermal stability of quantum dots that were rapidly cooled down to room temperature following the growth of a GaAs capping layer. The observed thermal behavior is attributed to metastable states formed during post growth thermal cycle.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 829: Symposium B – Progress in Compound Semiconductor Materials IV – Electronic and Optoelectronic Applications , 2004 , B1.9
Copyright
Copyright © Materials Research Society 2005

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References

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