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Thermal Stability of Cu Films on Tin/Ti/Si(100) by Partially Ionized Beam Deposition

Published online by Cambridge University Press:  03 September 2012

H. G. Jang ,
K. H. Kim ,
D. J. Choi ,
S. Han ,
S. C. Choi ,
W. K. Choi ,
H-J. Jung  and
S. K. Koh
H. G. Jang
Affiliation:
Division of Ceramics, Korea Institute of Science and Technology, P. 0. Box 131 Cheongryang, Seoul, 130-650, Korea,
K. H. Kim
Affiliation:
Division of Ceramics, Korea Institute of Science and Technology, P. 0. Box 131 Cheongryang, Seoul, 130-650, Korea,
D. J. Choi
Affiliation:
Dep. of Ceramic Eng., Yonsei university, Seoul, Korea
S. Han
Affiliation:
Division of Ceramics, Korea Institute of Science and Technology, P. 0. Box 131 Cheongryang, Seoul, 130-650, Korea,
S. C. Choi
Affiliation:
Division of Ceramics, Korea Institute of Science and Technology, P. 0. Box 131 Cheongryang, Seoul, 130-650, Korea,
W. K. Choi
Affiliation:
Division of Ceramics, Korea Institute of Science and Technology, P. 0. Box 131 Cheongryang, Seoul, 130-650, Korea,
H-J. Jung
Affiliation:
Division of Ceramics, Korea Institute of Science and Technology, P. 0. Box 131 Cheongryang, Seoul, 130-650, Korea,
S. K. Koh
Affiliation:
Division of Ceramics, Korea Institute of Science and Technology, P. 0. Box 131 Cheongryang, Seoul, 130-650, Korea,
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Abstract

Cu thin films with a thickness around 850 Å were prepared on Ti45N55/Ti/Si(100) substrates at room temperature by partially ionized beam deposition (PIBD) with an ion energy of 3 keV at pressure of 8×10−7-1 x 10−6 Torr. The Cu/Ti45N55/Ti/Si samples were annealed at 8×10−6-1 × 10−5 Torr with annealing temperature of 500 to 700 °C for 30 min.. Thermal stability of the PIB-Cu films was investigated with Rutherford backscattering spectrometry (RBS), Auger electron spectroscopy (AES), Scanning electron microscopy (SEM), and X-ray diffraction (XRD). The as deposited Cu films had a (111) texture and there was no change of phase in annealed Cu films regardless of annealing temperature. Grain size of the annealed Cu films increased with annealing temperature. SEM studies show no hillock and no voiding on the Cu film surface up to annealing temperature of 700 °C. For PIB-Cu/Ti45N55/Ti/Si samples, all the layers were intact and there was no indication of interdiffusion by conventional depth profiling techniques (RBS, AES) up to 700 °C in vacuum for 30 minutes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 438: Symposium A – Materials Modificaton and Synthesis by Ion Beam… , 1996 , 387
Copyright
Copyright © Materials Research Society 1997

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