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Thermal Stability of a1-pt Thin Films/Gaas for Self-Aligning Gate Contacts

Published online by Cambridge University Press:  25 February 2011

G. D. Wilk ,
B. Blanpain ,
J. O. Olowolafe ,
J. W. Mayer  and
L. R. Zheng
G. D. Wilk
Affiliation:
Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, NY 14853
B. Blanpain
Affiliation:
Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, NY 14853
J. O. Olowolafe
Affiliation:
Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, NY 14853
J. W. Mayer
Affiliation:
Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, NY 14853
L. R. Zheng
Affiliation:
Corporate Research Laboratories, Eastman Kodak Company, Rochester, NY 14650-2011
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Abstract

Several compositions of Al-Pt thin films have been co-evaporated on GaAs substrates to study the stability of the alloys at high-temperature anneals. The Al concentration in the alloys ranges from 45 at.% to 70 at.%, and we show that the films meet thermal stability requirements imposed by GaAs self-aligning gate technology for compositions between AlPt and Al2Pt.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 295
Copyright
Copyright © Materials Research Society 1990

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References

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