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Thermal Stability and Electrical Properties of Ag(Al)Metallization

Published online by Cambridge University Press:  17 March 2011

Hyunchul C. Kim ,
N. David Theodore ,
James W. Mayer  and
Terry L. Alford
Hyunchul C. Kim
Affiliation:
Department of Chemical and Materials Engineering, Arizona State University, Tempe, AZ 85287, U.S.A
N. David Theodore
Affiliation:
Digital DNATM Labs., Motorola Inc., 2100 E. Elliot Rd. MD-EL622, Tempe, AZ, 85284, U.S.A
James W. Mayer
Affiliation:
Department of Chemical and Materials Engineering, Arizona State University, Tempe, AZ 85287, U.S.A
Terry L. Alford
Affiliation:
Department of Chemical and Materials Engineering, Arizona State University, Tempe, AZ 85287, U.S.A
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Abstract

The thermal stability and electrical resistivity of Ag(Al) alloy thin filmson SiO2 are investigated and compared to pure Ag thin films byperforming various analyses: Rutherford backscattering spectrometry (RBS),X-ray diffractometry (XRD), transmission electron microscopy (TEM), andfour-point probe. The susceptibility to agglomeration of Ag on SiO2 layer is a drawback of Ag metallization. Ag(Al) thinfilms show good thermal stability on SiO2 layer without anydiffusion barrier. The films are stable up to 600 °C for 1 hour in vacuum.Electrical resistivity of as-deposited Ag (5 at % Al) thin film is slightlyhigher than that of pure Ag thin film. However, the resistivity of Ag(Al)samples annealed at high temperatures (up to 600 °C for 1 hour in vacuum)remains constant due to the improvement of thermal stability (largereduction of agglomeration). This finding can impact metallization for thinfilm transistors (TFT) for displays, including flexible displays, andhigh-speed electronics due to lower resistivity value compared to Cu thinfilm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 812: Symposium F – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics-2004 , 2004 , F3.24
Copyright
Copyright © Materials Research Society 2004

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