Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-29T10:34:33.988Z Has data issue: false hasContentIssue false
  • English
  • Français

Thermal Plasma Physical Vapor Deposition of Nanostructured SiC Coatings

Published online by Cambridge University Press:  11 February 2011

Xinhua Wang ,
Keisuke Eguchi ,
Atsushi Yamamoto  and
Toyonobu Yoshida
Xinhua Wang
Affiliation:
Department of Materials Engineering, Graduate School of Engineering, The University of Tokyo, Hongo 7–3–1, Bunkyo-Ku, Tokyo 113–8656, Japan
Keisuke Eguchi
Affiliation:
Department of Materials Engineering, Graduate School of Engineering, The University of Tokyo, Hongo 7–3–1, Bunkyo-Ku, Tokyo 113–8656, Japan
Atsushi Yamamoto
Affiliation:
Department of Materials Engineering, Graduate School of Engineering, The University of Tokyo, Hongo 7–3–1, Bunkyo-Ku, Tokyo 113–8656, Japan
Toyonobu Yoshida
Affiliation:
National Institute of Advanced Industrial Science and Technology, Tsukuba, Japan
Get access

Abstract

Nanostructured and thick SiC coatings have been successfully deposited on Si and graphite substrates by thermal plasma physical vapor deposition (TPPVD) using ultrafine SiC powder as a starting material. The control of processing parameters such as substrate temperature, composition of plasma gases, permits to the deposition of SiC coatings with a variety of microstructures and with various morphologies from dense to columnar. The maximum deposition rate reached 200 nm/s. Seebeck coefficient up to −480 μV/K was obtained for the non-doped coatings with stoichiometric composition. Nitrogen doping to the coatings made it possible to decrease the electrical resistivity from 10-2∼10-3 to 10-4∼10-5 Ωm and showing the maximum power factor of 1.0×10-3 Wm-1K-2 at 973 K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 742: Symposium K – Silicon Carbide-Materials, Processing, and Devices , 2002 , K2.19
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Harris, G.L., in Properties of Silicon Carbide, edited by Harris, G.L. (INSPEC, London, 1995) p. 3.Google Scholar
2. Ishiyama, S., Fukaya, K. and Eto, M., Key Engineering Materials, 159–160, 423 (1999).Google Scholar
3. Kato, K., Asai, K., Okamoto, Y., Morimoto, J. and Miyakawa, T., J. Mater. Res. 14, 1752 (1999).Google Scholar
4. Yoshida, T., Tani, T., Nishimura, H. and Akashi, K., J. Appl. Phys. 54, 640 (1983).Google Scholar
5. Murakami, H., Yoshida, T. and Akashi, K., Advanced Ceramic Materials, 3, 423 (1988).Google Scholar