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Thermal Oxidation of Ni and Co Alloys Formed by Electroless Plating

Published online by Cambridge University Press:  01 February 2011

Jeff Gambino ,
Igor Ivanov ,
Steve Mongeon ,
Ed Adams ,
Scott Hazel ,
Dave Meatyard ,
Phil Pokrinchak ,
Fen Chen ,
Pat DeHaven  and
Artur Kolics
...Show all authors
Jeff Gambino
Affiliation:
[email protected], IBM Microelectronics, Z/975A, 1000 River Street, Essex Junction, VT, 05452, United States, 802-769-0433
Igor Ivanov
Affiliation:
[email protected], Blue29, Inc., Sunnyvale, CA, 94089, United States
Steve Mongeon
Affiliation:
[email protected], IBM Microelectronics, Essex Junction, VT, 05452, United States
Ed Adams
Affiliation:
[email protected], IBM Microelectronics, Essex Junction, VT, 05452, United States
Scott Hazel
Affiliation:
[email protected], IBM Microelectronics, Essex Junction, VT, 05452, United States
Dave Meatyard
Affiliation:
[email protected], IBM Microelectronics, Essex Junction, VT, 05452, United States
Phil Pokrinchak
Affiliation:
[email protected], IBM Microelectronics, Essex Junction, VT, 05452, United States
Fen Chen
Affiliation:
[email protected], IBM Microelectronics, Essex Junction, VT, 05452, United States
Pat DeHaven
Affiliation:
[email protected], IBM Microelectronics, Hopewell Junction, NY, 12533, United States
Artur Kolics
Affiliation:
[email protected], Blue29, Inc., Sunnyvale, CA, 94089, United States
Marina Polyanskaya
Affiliation:
[email protected], Blue29, Inc., Sunnyvale, CA, 94089, United States
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Abstract

The thermal oxidation of Co alloy and Ni alloy thin films on top of Cu, has been studied as a function of film composition. Four different alloys were studied; CoWP, CoWB, CoMoB, and NiMoB. For the Co alloys, significant oxidation is observed after an air anneal above 350C, accompanied by Cu diffusion through the film to the surface. In contrast, for the NiMoB films, there is minimal oxidation of the surface even after a 400C anneal in air, and Cu diffusion through the film is greatly reduced. These results indicate that Ni-based barriers may be desirable in applications where self-aligned metal layers are used on top of Cu interconnects as a replacement for dielectric caps such as SiN and SiCN.

Keywords

oxidationCubarrier layer
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 914: Symposium F – Materials, Technology and Reliability of Low-k Dielectrics and Copper Interconnects , 2006 , 0914-F05-09
Copyright
Copyright © Materials Research Society 2006

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References

1 Edelstein, D. et al., IEDM Proc., 1997, p. 773.Google Scholar
2 Ko, T. et al., VLSI Symp. Proc., 2003, p. 109.Google Scholar
3 Hu, C.-K. et al., Microelec. Eng., 70, 406 (2003).Google Scholar
4 Gambino, J. et al., AMC 2005 Proc., MRS, 2006, p. 151.Google Scholar
5 Gambino, J. et al., IPFA Conf., 2005, p. 92.Google Scholar
6 Gambino, J. et al., MRS Proc., vol. 863, 2005, p. 227.Google Scholar
7 Kohn, A. et al., Mater. Sci. Eng. A, 302, 18 (2001).Google Scholar
8 Wirth, A. et al., AMC 2003 Proc., MRS, 2004, p. 329.Google Scholar
9 Zhu, Y., Mimura, K., Isshiki, M., Mater. Trans., 43, 2173 (2002).Google Scholar
10 Hu, Y.Z., Sharangpani, R., Tay, S.-P., J. Electrochem. Soc., 148, G669 (2001).Google Scholar
11 Zhang, Z.L., Xiao, Z.G., Tu, G.W., Thin Sol. Films, 286, 295 (1996).Google Scholar
12 McIntyre, N.S. et al., Surf. Interface Analysis, 15, 265, (1990).Google Scholar
13 Peraldi, R., Monceau, D., Pieraggi, B., Oxidation Met., 58, 275 (2002).Google Scholar
14 Stamper, A.K. et al., AMC 2002 Proc., MRS, 2003, p. 485.Google Scholar
15 Sun, L., Yang, J.C., J. Mat. Res., 20, 1911 (2005).Google Scholar
16 Antonelli, S.B. et al., J. Electrochem. Soc., 152, J120 (2005).Google Scholar