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Thermal Oxidation of Amorphous Silicon-Boron Alloy

Published online by Cambridge University Press:  22 February 2011

W. M. Lau ,
R. Yang ,
B. Y. Tong  and
S. K. Wong
W. M. Lau
Affiliation:
Surface Science Western, University of Western Ontario, London, Ontario, Canada N6A 5B7
R. Yang
Affiliation:
Department of Physics, University of Western Ontario, London, Ontario, Canada N6A 5B7
B. Y. Tong
Affiliation:
Department of Physics, University of Western Ontario, London, Ontario, Canada N6A 5B7
S. K. Wong
Affiliation:
Department of Chemistry, University of Western Ontario, London, Ontario, Canada N6A 5B7
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Abstract

The thermal oxidation of amorphous silicon-boron alloy (prepared by low pressure chemical vapor deposition) with boron contents ranged from 0–40% at a temperature range of 25- 700 °C has been carried out. Crystalline silicon and polycrystalline boron have also been studied for comparison purposes. The resultant thin oxide overlayers were characterized by X-ray photoelectron spectroscopy. It was found that both the oxidation of Si and of B are enhanced by mixing of the two elements. The oxidation of boron is significantly slower than silicon. During oxidation of silicon-boron alloy, preferential oxidation of silicon occurs at the oxide/bulk interface and the silicon oxide overlayer advances into the bulk faster than the boron oxide.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 105: Symposium F – SiO2 and Its Interfaces , 1987 , 163
Copyright
Copyright © Materials Research Society 1988

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