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Thermal Effects of Gasses in Rapid Thermal Processing

Published online by Cambridge University Press:  28 February 2011

K. L. Knutson ,
S. A. Campbell  and
J. D. Leighton
K. L. Knutson
Affiliation:
Department of Electrical Engineering, University of Minnesota200 Union Street Minneapolis Minnesota 55455
S. A. Campbell
Affiliation:
Department of Electrical Engineering, University of Minnesota200 Union Street Minneapolis Minnesota 55455
J. D. Leighton
Affiliation:
Department of Electrical Engineering, University of Minnesota200 Union Street Minneapolis Minnesota 55455
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Abstract

A numerical model has been created for a Rapid Thermal Processing (RTP) system. Experiments have been done to show the validity of the model. The simulations done examine thermal uniformity and stresses incurred by RTP during steady state operation and during short time temperature ramps. It is shown that increasing the radiant intensity at the edge of the wafer reduces stress, compared to a uniform radiant field, in steadystate operation but increases stress during short time temperature ramps.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 224: Symposium F – Rapid Thermal and Integrated Processing I , 1991 , 203
Copyright
Copyright © Materials Research Society 1991

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References

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