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Thermal Annealing Recovery of Intersubband Transition in Proton-Irradiated GaAs/Al0.3Ga0.7As Multiple Quantum Wells

Published online by Cambridge University Press:  10 February 2011

H.S. Gingrich ,
C. Morath ,
M.O. Manasreh ,
P. Ballet ,
J.B. Smathers ,
G. J. Salamo  and
C. Jagadish
H.S. Gingrich
Affiliation:
Air Force Research Laboratory (AFRL/VSSS), 3550 Aberdeen Ave., SE, Kirtland AFB, NM 87117-5776, [email protected]
C. Morath
Affiliation:
Air Force Research Laboratory (AFRL/VSSS), 3550 Aberdeen Ave., SE, Kirtland AFB, NM 87117-5776
M.O. Manasreh
Affiliation:
Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, NM 87131
P. Ballet
Affiliation:
Department of Physics, University of Arkansas, Fayetteville, AR
J.B. Smathers
Affiliation:
Department of Physics, University of Arkansas, Fayetteville, AR
G. J. Salamo
Affiliation:
Department of Physics, University of Arkansas, Fayetteville, AR
C. Jagadish
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, Australia
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Abstract

Optical absorption spectra of intersubband transitions in heavily proton irradiated n-type GaAs/AlGaAs multiple quantum wells were studied as a function of isochronal and isothermal annealing. The absorption spectra of intersubband transitions were depleted in samples irradiated with 1MeV proton doses higher than 1.0 × 1014 cm−2. Thermal annealing of the irradiated samples show that the intersubband transitions are recovered. The relatively lower annealing temperatures at which the recovery is observed indicate that the irradiation-induced defects that trapped the two-dimensional electron gas in the quantum wells are vacancy and interstitial related defects. Once these traps are thermally annealed the electrons are released back to the quantum wells, resulting in the recovery of the intersubband transitions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 607: Symposium OO – Infrared Applications of Semiconductors III , 1999 , 217
Copyright
Copyright © Materials Research Society 2000

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