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Thermal and thermoelectric properties of III-nitride and III-oxynitride films prepared by reactive RF sputtering

Published online by Cambridge University Press:  01 February 2011

R. Izaki
Affiliation:
Department of Electrical, Electronic and Information Engineering, Kanagawa University, 3–27–1 Rokkakubashi, Kanagawa-ku, Yokohama 221–8686, Japan
N. Kaiwa
Affiliation:
Department of Electrical, Electronic and Information Engineering, Kanagawa University, 3–27–1 Rokkakubashi, Kanagawa-ku, Yokohama 221–8686, Japan
S. Sugimura
Affiliation:
Department of Electrical, Electronic and Information Engineering, Kanagawa University, 3–27–1 Rokkakubashi, Kanagawa-ku, Yokohama 221–8686, Japan
S. Yamaguchi
Affiliation:
Department of Electrical, Electronic and Information Engineering, Kanagawa University, 3–27–1 Rokkakubashi, Kanagawa-ku, Yokohama 221–8686, Japan Energy Electronics Institute, National Institute of Advanced Industrial Science and Technology, AIST, Tsukuba Central 2, 1–1–1 Umezono, Tsukuba 305–8568, Japan
A. Yamamoto
Affiliation:
Energy Electronics Institute, National Institute of Advanced Industrial Science and Technology, AIST, Tsukuba Central 2, 1–1–1 Umezono, Tsukuba 305–8568, Japan
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Abstract

Towards fabricating a thermoelectric power device using III-nitrides and III-oxynitrides, we studied their thermal and thermoelectric properties and, in particular, we have focused on their thermal conductivity. AInN and AlInON were prepared by reactive radio-frequency sputtering method. We measured the thermal diffusivity and specific heat using the ac calorimetric method, and we estimated values of the thermal conductivity to be 2.2 W/mK (at 773 K) for AlInN and 3.3 W/mK (at 673 K) for AlInON. These values are much smaller than expected considering the large thermal conductivity of nitrides. As for a device composed of 20-pair Chromel-AlInN films, the maximum output power was 0.36 μW at the temperature difference of 180 K, and the open voltage was 0.10 V.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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References

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