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Theory of Gain in Group-HI Nitride Lasers

Published online by Cambridge University Press:  10 February 2011

W. W. Chow ,
A. F. Wright ,
A. Girndt ,
F. Jahnke  and
S. W. Koch
W. W. Chow
Affiliation:
Sandia National Laboratories, Albuquerque, NM 85718–0601, U. S. A., [email protected]
A. F. Wright
Affiliation:
Sandia National Laboratories, Albuquerque, NM 85718–0601, U. S. A.
A. Girndt
Affiliation:
Department of Physics, Philipps University, Renthof 5, 35032 Marburg, Germany
F. Jahnke
Affiliation:
Department of Physics, Philipps University, Renthof 5, 35032 Marburg, Germany
S. W. Koch
Affiliation:
Department of Physics, Philipps University, Renthof 5, 35032 Marburg, Germany
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Abstract

A microscopic theory of gain in a group-III nitride quantum well laser is presented. The approach, which treats carrier correlations at the level of quantum kinetic theory, gives a consistent account of plasma and excitonic effects in an inhomogeneously broadened system.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 468: Symposium D – Gallium Nitride and Related Materials II , 1997 , 487
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

[1] Chow, W. W., Knorr, A. and Koch, S. W., Appl. Phys. Letts. 67, 754 (1995).Google Scholar
[2] Nakamura, S., SPIE Conference on Physics and Simulation of Opto-Electronic Devices, 8–14 Feb. 1997, San Jose, CA.Google Scholar
[3] Chow, W. W., Koch, S. W. and Sargent, M. III, Semiconductor-Laser Physics, (Springer Verlag, Berlin, 1994), p. 124.Google Scholar
[4] Lindberg, M. and Koch, S. W., Phys. Rev. B38, 3342 (1988).Google Scholar
[5] Jahnke, F., et al, Phys. Rev. Lett. 77, 5257 (1996).Google Scholar
[6] Chuang, S. L. and Chang, C. S., Phys. Rev. B54 (1996).Google Scholar
[7] Wright, A. F. and Nelson, J. S., Appl. Phys. Letts. 66, 3051 (1995).Google Scholar
[8] Jain, F. and Huang, W., IEEE J. Quantum Electron. 32, 859 (1996).Google Scholar
[9] Henry, C. H., Logan, R. A. and Merritt, F. R., J. Appl. Phys. 51, 3042 (1980).Google Scholar
[10] Wright, A. F. and Nelson, J. S., Phys. Rev. B51, 7866 (1995).Google Scholar
[11] Jenkins, S. J., Srivastava, G. P. and Inkson, J. C., Phys. Rev. B48, 4388 (1993).Google Scholar
[12] Perry, P. B. and Rutz, R. F., Appl. Phys. Letts. 33, 319 (1978).Google Scholar
[13] Monemar, B., Phys. Rev. B10, 676 (1974).Google Scholar
[14] Tansley, T. L. and Foley, C. P., J. Appl. Phys. 59, 3241 (1986).Google Scholar
[15] Wei, S. H. and Zunger, A., Appl. Phys. Letts. 69, 2719 (1996).Google Scholar
[16] Tyagai, V. A., Evstigneev, A. M., Krasiko, A. N., Andreeva, A. F. and Malakhov, V. Y., Soviet Phys. Semicond. 11, 1257 (1977).Google Scholar